PD- 94022A
IRF7425
HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
VDSS
ID
8.2@VGS = -4.5V
13@VGS = -2.5V
-15A
-13A
20V
Description
A
D
1
8
2
7
D
S
3
6
D
G
4
5
D
S
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
Ω)
RDS(on) max (mΩ)
S
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
11/20/01
IRF7425
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.010
–––
–––
–––
–––
–––
–––
–––
–––
87
18
21
13
20
230
160
7980
1480
980
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
8.2
VGS = -4.5V, ID = -15A mΩ
13
VGS = -2.5V, ID = -13A -1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -15A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
130
ID = -15A
27
nC
VDS = -10V
32
VGS = -4.5V
–––
VDD = -10V –––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-60
–––
–––
–––
–––
120
160
-1.2
180
240
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs D
S
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7425
1000
1000
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
10
1
0.1
-1.0V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = -15V
20µs PULSE WIDTH
1.6
1.8
2.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
1.4
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VGS , Gate-to-Source Voltage (V)
-1.0V
1
-VDS , Drain-to-Source Voltage (V)
0.1
1.0
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
TOP
2.2
ID = -15A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7425
12000
-VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
8
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
6000
4000
Coss
Crss
2000
ID = -15A
VDS =-16V
VDS =-10V
6
4
2
0
0
1
10
0
100
40
160
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.4
0.6
100
100us
1ms
10
10ms
0.8
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
80
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
1.0
TA = 25 °C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7425
15
RD
VDS
VGS
12
D.U.T.
-ID , Drain Current (A)
RG
+
VDD
9
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.015
RDS (on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to -Source On Resistance ( Ω )
IRF7425
0.010
ID = -15A
0.005
1.0
2.0
3.0
4.0
5.0
0.010
0.009
VGS = -2.5V
0.008
0.007
0.006
VGS = -4.5V
0.005
0
10
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
60
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7425
3.0
120
2.5
80
ID = -250µA
2.0
Power (W)
-VGS(th) , Variace ( V )
100
60
40
20
1.5
0
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature
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150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7425
SO-8 Package Details
DIM
B
5
A
8
7
6
6
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
e1
6X e
e1
C
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
A1
8X b
MILLIMETERS
MAX
A
5
INCHES
MIN
C A B
8X L
8X c
7
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
D
8X 0.72 [.028]
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
8
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EXAMPLE: THIS IS AN IRF7101 (MOSFET)
SO-8 Part Marking
IRF7425
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/01
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9