Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 1200 33 20 66 66 ±20 15 160 65 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-47 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.77 — 40 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGPH40S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 1.3 — V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage — 2.5 3.0 IC = 20A VGE = 15V — 2.9 — V IC = 33A — 2.8 — IC = 20A, TJ = 150°C Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance — 12 — S VCE = 100V, IC = 20A Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V — — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 50 — IC = 20A 14 — nC VCC = 400V 12 — VGE = 15V 30 — TJ = 25°C 22 — ns IC = 20A, VCC = 960V 1400 — VGE = 15V, RG = 10Ω 680 — Energy losses include "tail" 1.4 — 20 — mJ 21.4 — 28 — TJ = 150°C, 27 — ns IC = 20A, VCC = 960V 1300 — VGE = 15V, RG = 10Ω 2100 — Energy losses include "tail" 50 — mJ 13 — nH Measured 5mm from package 1650 — VGE = 0V 73 — pF VCC = 30V 14 — ƒ = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω Pulse width ≤ 80µs; duty factor ≤ 0.1%. Refer to Section D - page D-13 Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-48 To Order Pulse width 5.0µs, single shot.