PD -90930B IRGIH50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses VCES = 1200V VCE(on) max =2.9V G @VGE = 15V, IC = 25A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-259AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 1200 45 25 180 90 ±20 200 80 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 10.5 (typical) g Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.625 0.21 — — 30 Test Conditions °C/W For footnotes refer to the last page www.irf.com 1 02/18/02 IRGIH50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Emitter-to-Collector Breakdown Voltage ➂ 22 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 1.1 ––– 2.1 VCE(ON) Collector-to-Emitter Saturation Voltage ––– 2.5 ––– 2.4 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -14 gfe Forward Transconductance T 7.5 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 100 µA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 2.9 IC = 25A ––– IC = 45A See Fig.2, 5 V ––– IC = 25A , TJ = 125°C 5.5 VCE = VGE, IC = 250 µA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE = 100V, IC = 25A 100 VGE = 0V, VCE = 960V µA 1200 VGE = 0V, VCE = 960V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– 1.4 4.5 5.9 33 15 590 500 13 6.8 Max. Units Conditions 100 IC = 25A 21 nC VCC = 400V See Fig. 8 ➄ 43 VGE = 15V 68 IC = 25A, VCC = 400V 26 VGE = 15V, RG = 2.35Ω ➄ ns 480 Energy losses include "tail" 330 See Fig. 9, 10, 14 ––– mJ ––– 8.2 ––– TJ = 125°C ––– IC = 25A, VCC = 400V ns ➄ ––– VGE = 15V, RG = 2.35Ω ––– Energy losses include "tail" ––– mJ See Fig. 11, 14 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– 2400 ––– VGE = 0V ––– 140 ––– pF VCC = 30V See Fig. 7 ––– 28 ––– ƒ = 1.0MHz Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRGIH50F Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRGIH50F Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGIH50F Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRGIH50F 125°C Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 Fig. 12 - Turn-Off SOA www.irf.com IRGIH50F L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V 960V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 960V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRGIH50F Notes: Q Repetitive rating; VGE = 20V, pulse width limited by T Pulse width 5.0µs, single shot. max. junction temperature. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω ➄ Equipment limitation. S Pulse width ≤ 80µs; duty factor ≤ 0.1%. Case Outline and Dimensions — TO-259AA LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com