Previous Datasheet Index Next Data Sheet PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V G @VGE = 15V, IC = 11A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 900 20 11 40 40 ±20 10 100 42 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-243 To Order Min. Typ. Max. — — — — — 0.50 — 2.0 (0.07) 1.2 — 80 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGBF30F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Min. Typ. Max. Units Conditions 900 — — V VGE = 0V, IC = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.83 — V/°C VGE = 0V, IC = 1.0mA — 2.6 3.7 IC = 11A VGE = 15V — 3.3 — V IC = 20A See Fig. 2, 5 — 2.9 — IC = 11A, TJ = 150°C Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance 3.6 6.9 — S VCE = 100V, IC = 11A Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 900V — — 1000 VGE = 0V, VCE = 900V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 22 33 IC = 11A 5.1 7.7 nC VCC = 400V See Fig. 8 8.0 12 VGE = 15V 27 — TJ = 25°C 9.7 — ns IC = 11A, VCC = 720V 160 280 VGE = 15V, RG = 23Ω 140 240 Energy losses include "tail" 0.33 — 0.67 — mJ See Fig. 9, 10, 11, 14 1.0 1.9 27 — TJ = 150°C, 12 — ns IC = 11A, VCC = 720V 260 — VGE = 15V, RG = 23Ω 250 — Energy losses include "tail" 2.0 — mJ See Fig. 10, 14 7.5 — nH Measured 5mm from package 560 — VGE = 0V 50 — pF VCC = 30V See Fig. 7 7.3 — ƒ = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-244 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGBF30F 25 F o r b o th : 20 L O A D C U R R E N T (A ) T ria n g u la r w a v e : D uty c y cle: 50% TJ = 125°C T sink = 90° C G ate driv e as spe c ified P o w e r D is s ip a tio n = 2 1 W C la m p v o lta g e : 8 0 % o f ra te d 15 S q u a re w a v e : 6 0 % o f ra te d v o lta g e 10 5 Id ea l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 100 I C , Collector-to-Em itter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) T J = 2 5°C TJ = 25 °C TJ = 15 0 °C 10 T J = 1 50 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 V C C = 1 00 V 5 µ s P U L S E W ID TH 1 5 10 10 15 20 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-245 To Order Previous Datasheet Index Next Data Sheet IRGBF30F 5.0 V G E = 15 V V C E , C o llec to r-to-E m itter V oltage (V ) Maxim um D C Collector C urrent (A ) 20 16 12 8 4 V G E = 1 5V 8 0µ s P U LS E W IDTH IC = 2 2 A 4.0 I C = 1 1A 3.0 I C = 5.5 A 2.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 T C , C a s e Te m p e ra ture (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z thJ C ) 10 1 D = 0.5 0 0.20 PD M 0.10 0.1 0 .0 2 0 .0 1 0.01 0.00001 t 0 .05 1 t S IN G L E PU LS E (TH E R MAL RE S PO N SE ) N o te s : 1 . D u ty f ac t or D = t 1 / t 2 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-246 To Order 10 Previous Datasheet Index Next Data Sheet IRGBF30F 10 0 0 V G E , G ate-to-E m itter V oltag e (V ) 800 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 40 0V I C = 11 A 16 Cies 600 12 Coes 400 200 Cres 0 8 4 0 1 10 100 0 5 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1 .0 8 15 20 25 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 72 0V = 1 5V = 25°C = 11 A T o tal S w itc hing Los se s (m J) T o ta l S w itc h in g L o s se s (m J ) 1 .1 0 10 Q g , T o tal G a te C h a rg e (n C ) 1 .0 6 1 .0 4 1 .0 2 R G = 22 Ω V GE = 1 5V V CC = 7 20 V I C = 22 A I C = 11 A 1 I C = 5.5 A 1 .0 0 0 .9 8 0.1 20 25 30 35 40 45 50 55 -60 R G , G a te R e s is ta n c e ( Ω ) -40 -20 0 20 40 60 80 100 12 0 140 160 TC , C a s e T e m p era tu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-247 To Order Previous Datasheet Index Next Data Sheet IRGBF30F RG TC V CC VGE 5.0 100 = 22 Ω = 150 °C = 7 20 V = 15 V I C , C ollec to r-to -E m itter C u rre nt (A ) Total Sw itching Losses (m J) 6.0 4.0 3.0 2.0 1.0 VGGE E= 20 V T J = 12 5°C S A FE O P E R A TIN G A R E A 10 1 0.1 0.0 0 5 10 15 20 1 25 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o llector-to -E m itte r Current (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB C-248 To Order Section D - page D-12 1000