IRF IRGBF30

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PD - 9.773
IRGBF30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 900V
VCE(sat) ≤ 3.7V
G
@VGE = 15V, IC = 11A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
900
20
11
40
40
±20
10
100
42
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-243
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.50
—
2.0 (0.07)
1.2
—
80
—
Units
°C/W
g (oz)
Revision 0
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IRGBF30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
Conditions
900
—
—
V
VGE = 0V, IC = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.83 —
V/°C VGE = 0V, IC = 1.0mA
—
2.6 3.7
IC = 11A
VGE = 15V
—
3.3
—
V
IC = 20A
See Fig. 2, 5
—
2.9
—
IC = 11A, TJ = 150°C
Gate Threshold Voltage
3.0
—
5.5
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage —
-11
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
3.6 6.9
—
S
VCE = 100V, IC = 11A
Zero Gate Voltage Collector Current
—
— 250
µA
VGE = 0V, VCE = 900V
—
— 1000
VGE = 0V, VCE = 900V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
22
33
IC = 11A
5.1 7.7
nC VCC = 400V
See Fig. 8
8.0
12
VGE = 15V
27
—
TJ = 25°C
9.7
—
ns
IC = 11A, VCC = 720V
160 280
VGE = 15V, RG = 23Ω
140 240
Energy losses include "tail"
0.33 —
0.67 —
mJ See Fig. 9, 10, 11, 14
1.0 1.9
27
—
TJ = 150°C,
12
—
ns
IC = 11A, VCC = 720V
260
—
VGE = 15V, RG = 23Ω
250
—
Energy losses include "tail"
2.0
—
mJ See Fig. 10, 14
7.5
—
nH Measured 5mm from package
560
—
VGE = 0V
50
—
pF
VCC = 30V
See Fig. 7
7.3
—
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-244
To Order
Pulse width 5.0µs,
single shot.
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IRGBF30F
25
F o r b o th :
20
L O A D C U R R E N T (A )
T ria n g u la r w a v e :
D uty c y cle: 50%
TJ = 125°C
T sink = 90° C
G ate driv e as spe c ified
P o w e r D is s ip a tio n = 2 1 W
C la m p v o lta g e :
8 0 % o f ra te d
15
S q u a re w a v e :
6 0 % o f ra te d
v o lta g e
10
5
Id ea l d io d e s
0
0.1
1
10
100
f, F re q u e n c y (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
100
I C , Collector-to-Em itter C urrent (A )
I C , C ollector-to-E mitter C urrent (A )
T J = 2 5°C
TJ = 25 °C
TJ = 15 0 °C
10
T J = 1 50 °C
10
V G E = 15 V
20 µs P UL S E W ID TH
1
1
V C C = 1 00 V
5 µ s P U L S E W ID TH
1
5
10
10
15
20
V G E , G ate -to-E m itter V olta ge (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-245
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IRGBF30F
5.0
V G E = 15 V
V C E , C o llec to r-to-E m itter V oltage (V )
Maxim um D C Collector C urrent (A )
20
16
12
8
4
V G E = 1 5V
8 0µ s P U LS E W IDTH
IC = 2 2 A
4.0
I C = 1 1A
3.0
I C = 5.5 A
2.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
T C , C a s e Te m p e ra ture (°C )
T C , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z thJ C )
10
1
D = 0.5 0
0.20
PD M
0.10
0.1
0 .0 2
0 .0 1
0.01
0.00001
t
0 .05
1
t
S IN G L E PU LS E
(TH E R MAL RE S PO N SE )
N o te s :
1 . D u ty f ac t or D = t
1
/ t
2
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-246
To Order
10
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IRGBF30F
10 0 0
V G E , G ate-to-E m itter V oltag e (V )
800
C, C apacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
V C E = 40 0V
I C = 11 A
16
Cies
600
12
Coes
400
200
Cres
0
8
4
0
1
10
100
0
5
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
1 .0 8
15
20
25
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 72 0V
= 1 5V
= 25°C
= 11 A
T o tal S w itc hing Los se s (m J)
T o ta l S w itc h in g L o s se s (m J )
1 .1 0
10
Q g , T o tal G a te C h a rg e (n C )
1 .0 6
1 .0 4
1 .0 2
R G = 22 Ω
V GE = 1 5V
V CC = 7 20 V
I C = 22 A
I C = 11 A
1
I C = 5.5 A
1 .0 0
0 .9 8
0.1
20
25
30
35
40
45
50
55
-60
R G , G a te R e s is ta n c e ( Ω )
-40
-20
0
20
40
60
80
100 12 0 140 160
TC , C a s e T e m p era tu re (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-247
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IRGBF30F
RG
TC
V CC
VGE
5.0
100
= 22 Ω
= 150 °C
= 7 20 V
= 15 V
I C , C ollec to r-to -E m itter C u rre nt (A )
Total Sw itching Losses (m J)
6.0
4.0
3.0
2.0
1.0
VGGE E= 20 V
T J = 12 5°C
S A FE O P E R A TIN G A R E A
10
1
0.1
0.0
0
5
10
15
20
1
25
10
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
I C , C o llector-to -E m itte r Current (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix F: Section D - page D-8
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
C-248
To Order
Section D - page D-12
1000