IRF IRF7463PBF

PD - 95248
IRF7463PbF
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
l
HEXFET® Power MOSFET
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
VDSS
RDS(on) max
ID
30V
8mΩ
14A
Benefits
A
A
D
l
Ultra-Low Gate Impedance
S
1
8
l
Very Low RDS(on) at 4.5V VGS
S
2
7
D
S
3
6
D
G
4
5
D
l
Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 12
14
11
110
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead …
Junction-to-Ambient „…
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes  through … are on page 8
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1
10/12/04
IRF7463PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.0
7.0
10.5
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
8.0
mΩ
9.5
20
2.0
V
20
µA
100
200
nA
-200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A ƒ
VGS = 4.5V, ID = 11A ƒ
VGS = 2.7V, ID = 7.0A ƒ
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
41
––– –––
S
VDS = 24V, ID = 11A
–––
34
51
ID = 11A
–––
7.6 11.4
nC
VDS = 15V
–––
12
18
VGS = 4.5V ƒ
–––
21
32
VGS = 0V, VDS = 15V
–––
16 –––
VDD = 15V
––– 138 –––
ID = 11A
ns
–––
28 –––
RG = 1.8Ω
–––
6.5 –––
VGS = 4.5V ƒ
––– 3150 –––
VGS = 0V
––– 1070 –––
VDS = 15V
––– 180 –––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Typ.
Max.
Units
–––
–––
320
14
mJ
A
Single Pulse Avalanche Energy‚
Avalanche Current
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
110
––– 0.52
––– 0.44
––– 45
––– 65
––– 50
––– 80
1.3
–––
70
100
75
120
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V ƒ
TJ = 125°C, IS = 11A, VGS = 0V ƒ
TJ = 25°C, IF = 11A, VR=15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 11A, VR=15V
di/dt = 100A/µs ƒ
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IRF7463PbF
1000
1000
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.0V
100
100
10
1
2.0V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
2.0V
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
T J = 150°C
10.00
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000.00
0.10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.00
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
100.00
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.5
ID = 14A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7463PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
3000
2000
Coss
1000
ID = 11A
VDS = 24V
VDS = 15V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
30
40
50
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
100
10
TJ = 25 ° C
1
V GS = 0 V
0.4
10us
100
TJ = 150 ° C
0.8
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
0.1
0.0
10
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
4000
10
VGS , Gate-to-Source Voltage (V)
5000
1.6
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7463PbF
16
RD
VDS
ID , Drain Current (A)
VGS
D.U.T.
RG
12
+
- VDD
10V
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
t1
0.1
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7463PbF
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.0080
0.0075
VGS = 4.5V
0.0070
0.0065
VGS = 10V
0.0060
0
20
40
60
80
0.016
0.012
ID = 14A
0.008
0.004
2.0
100
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
EAS , Single Pulse Avalanche Energy (mJ)
12V
QGD
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
6.0
8.0
10.0
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
4.0
VGS, Gate -to -Source Voltage (V)
A
800
TOP
BOTTOM
600
ID
6.3A
11A
14A
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( ° C)
150
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7463PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
A
5
INCHES
MIN
MAX
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7463PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = 3.3mH
„ When mounted on 1 inch square copper board, t<10 sec
… Rθ is measured at TJ approximately 90°C
max. junction temperature.
RG = 25Ω, IAS = 14A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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