SEMD3 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two (galvanic) internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=10kΩ, R2 =10kΩ) 1 Tape loading orientation Top View 3 2 1 WR 4 5 6 Marking on SOT666 package (for example W R) corresponds to pin 1 of device C1 B2 E2 6 5 4 R2 R1 Position in tape: pin 1 same of feed hole side Direction of Unreeling TR2 TR1 R1 R2 1 2 3 E1 B1 C2 EHA07176 Type SEMD3 Marking W1 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 75 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-26-2004 SEMD3 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 0.75 mA hFE 30 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 Input resistor R1 7 10 13 kΩ Resistor ratio R1/R2 0.9 1 1.1 - fT - 130 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 2 Feb-26-2004 SEMD3 NPN Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0 2 0.2 0.4 V 0.6 1 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA 10 0 IC IC 10 1 10 0 10 -1 -1 10 10 0 10 1 V 10 2 Vi(on) 10 -1 10 -2 0 0.5 1 1.5 2 V 3 Vi(off) 3 Feb-26-2004 SEMD3 PNP Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0 2 0.2 0.4 V 0.6 IC 1 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA 10 0 IC IC 10 1 10 0 10 -1 -1 10 10 0 10 1 V 10 2 Vi(ON) 10 -1 10 -2 0 0.5 1 1.5 V 2.5 Vi(off) 4 Feb-26-2004 SEMD3 Total power dissipation P tot = f (TS) 300 Ptot mW 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax/ PtotDC K/W RthJS 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Feb-26-2004