BCR 148W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R 2=47kΩ) 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 148W WEs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 50 DC collector current IC 70 mA Total power dissipation, TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction ambient 1) RthJA ≤ 240 Junction - soldering point RthJS ≤ 105 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Oct-19-1999 BCR 148W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 164 µA hFE 70 - - - - - 0.3 V Vi(off) 0.8 - 1.5 V Vi(on) 1 - 3 Input resistor R1 32 47 62 kΩ Resistor ratio R1 /R2 0.9 1 1.1 - fT - 100 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 2 Oct-19-1999 BCR 148W DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 0.0 3 0.2 0.4 0.6 V IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA 10 0 IC IC 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 10 -3 0 2 Vi(on) 1 2 3 V 5 Vi(off) 3 Oct-19-1999 BCR 148W Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 mW Ptot TS 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Oct-19-1999