BCR139 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k) 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR139 WYs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 30 DC collector current IC 100 mA Total power dissipation, TS = 102 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 240 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-13-2001 BCR139 Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - V(BR)EBO 5 - - V ICBO - - 100 nA hFE 120 - 630 - - - 0.3 V Vi(off) 0.4 - 0.8 V Vi(on) 0.5 - 1.1 R1 15 22 29 fT - 150 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor k AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Jul-13-2001 BCR139 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 3 10 -1 A IC hFE 10 -2 10 2 10 -3 10 1 -4 10 10 -3 10 -2 A 10 10 -4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -1 IC V 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 -2 10 -1 A A 10 -3 IC IC 10 -2 10 -4 10 -3 10 -5 10 -4 -1 10 10 0 10 1 V 10 10 -6 0.0 2 Vi(on) 0.5 1.0 1.5 2.0 V 3.0 Vi(off) 3 Jul-13-2001 BCR139 Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jul-13-2001