IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS(on),max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Type Package Marking IPB60R299CPA PG-TO263-3 6R299A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 11 T C=100 °C 7 Pulsed drain current1) I D,pulse T C=25 °C 34 Avalanche energy, single pulse E AS I D=4.4 A, V DD=50 V 290 Avalanche energy, repetitive t AR1),2) E AR I D=4.4 A, V DD=50 V 0.44 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 4.4 A V DS=0...480 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 96 W Operating temperature Tj -40 ... 150 °C Storage temperature T stg -40 ... 150 Rev. 2.0 page 1 2009-09-09 IPB60R299CPA Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current IS Diode pulse current1) I S,pulse 34 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit 6.6 T C=25 °C A min. typ. max. - - 1.3 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area4) - 35 - MSL 1 - - 245 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, reflow soldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=0,44 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=6.6 A, T j=25 °C - 0.27 0.299 Ω V GS=10 V, I D=6.6 A, T j=150 °C - 0.73 f =1 MHz, open drain - 1.9 - Ω Gate resistance Rev. 2.0 RG page 2 2009-09-09 IPB60R299CPA Parameter Values Symbol Conditions Unit min. typ. max. - 1100 - - 60 - - 46 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related5) V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V pF Effective output capacitance, time related6) C o(tr) - 120 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 40 - Fall time tf - 5 - Gate to source charge Q gs - 5 - Gate to drain charge Q gd - 7.6 - Gate charge total Qg - 22 29 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 300 - ns - 3.9 - µC - 26 - A V DD=400 V, V GS=10 V, I D=6.6 A, R G=4.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=6.6 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=6.6 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch. 4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 page 3 2009-09-09 IPB60R299CPA 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 100 limited by on-state resistance 1 µs 75 10 µs 101 I D [A] P tot [W] 100 µs 50 1 ms DC 100 10 ms 25 10-1 0 0 40 80 120 100 160 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC=f(t P) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 45 10V 12 V 20 V 8V 30 0.5 I D [A] Z thJC [K/W] 100 0.2 0.1 6V 0.05 10-1 15 0.02 5.5 V 0.01 5V single pulse 4.5 V 10-2 10-5 0 10-4 10-3 10-2 10-1 100 t p [s] Rev. 2.0 0 5 10 15 20 V DS [V] page 4 2009-09-09 IPB60R299CPA 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 25 1.8 1.6 5V 20 V 20 12 V 6V 5.5 V 7V 1.4 6.5 V 10 V 6V 8V 1.2 10 V I D [A] R DS(on) [Ω] 5.5 V 15 10 5V 1 0.8 0.6 4.5 V 0.4 5 0.2 0 0 0 5 10 15 20 0 5 10 15 20 25 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=6.6 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max 1 50 0.8 40 0.6 30 25 °C I D [A] R DS(on) [Ω] parameter: T j 20 0.4 98 % 0.2 10 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.0 150 °C typ 0 2 4 6 8 10 V GS [V] page 5 2009-09-09 IPB60R299CPA 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 9 25 °C, 98% 8 7 25 °C 150 °C 400 V I F [A] V GS [V] 6 150 °C, 98% 101 120 V 5 4 100 3 2 1 10-1 0 0 5 10 15 20 0 25 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=4.4 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 300 700 660 E AS [mJ] V BR(DSS) [V] 200 620 100 580 0 540 25 75 125 175 Rev. 2.0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] page 6 2009-09-09 IPB60R299CPA 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 105 8 104 6 Ciss C [pF] E oss [µJ] 103 102 4 Coss 2 101 Crss 100 0 0 100 200 300 400 500 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 0 page 7 2009-09-09 IPB60R299CPA Definition of diode switching characteristics Rev. 2.0 page 8 2009-09-09 IPB60R299CPA PG-TO263-3: Outlines • Extreme dv/dt rated Rev. 2.0 page 9 2009-09-09 IPB60R299CPA Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2009-09-09 NOTIFICATION N° 040/10 Information on N-Channel MOSFET products designed for automotive applications Products affected: SalesName IPB60R099CPA IPB60R199CPA IPB60R299CPA IPC60R075CPA IPI60R099CPA IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41 Dear Customer, The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. Please take care that in the context of the application described above the datasheet limits are not exceeded. Best Regards Michael Paulu If you have any questions, please do not hesitate to contact your local Sales office. 2010-05-12 Page 1 of 1