BSO033N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application (Notebook, VGA, POL) R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 3.3 mΩ V GS=4.5 V 3.8 ID 22 A • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) PG-DSO-8 • Qualified for consumer level application • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSO033N03MS G PG-DSO-8 033N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Value Symbol Conditions ID Unit 10 secs steady state V GS=10 V, T A=25 °C 22 17 V GS=10 V, T A=90 °C 15 12.1 V GS=4.5 V, T A=25 °C 21 16 V GS=4.5 V, T A=90 °C 14.3 11.3 A Pulsed drain current2) I D,pulse T A=25 °C 154 Avalanche current, single pulse 3) I AS T A=25 °C 22 Avalanche energy, single pulse E AS I D=22 A, R GS=25 Ω 150 mJ Gate source voltage V GS ±20 V Power dissipation1) P tot Operating and storage temperature T j, T stg T A=25 °C 1.56 -55 ... 150 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.1.1 2.5 page 1 2009-11-19 BSO033N03MS G Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 50 6 cm2 cooling area1), steady state - - 80 30 - - Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 10 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=21 A - 3.0 3.8 mΩ V GS=10 V, I D=22 A - 2.8 3.3 0.9 1.9 3.3 Ω 46 93 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=22 A 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.1 page 2 2009-11-19 BSO033N03MS G Parameter Values Symbol Conditions Unit min. typ. max. - 7200 9600 - 1900 2500 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 150 - Turn-on delay time t d(on) - 27 - Rise time tr - 12.8 - Turn-off delay time t d(off) - 38 - Fall time tf - 14 - Gate to source charge Q gs - 19 - Gate charge at threshold Q g(th) - 11 - Gate to drain charge Q gd - 9.6 - Switching charge Q sw - 17 - Gate charge total Qg - 45 60 Gate plateau voltage V plateau - 2.6 - Gate charge total Qg V DD=15 V, I D=22 A, V GS=0 to 10 V - 93 124 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 39 52 Output charge Q oss V DD=15 V, V GS=0 V - 51 68 - - 3.6 - - 154 V DD=15 V, V GS=4.5 V, I D=22 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=15 V, I D=22 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=22 A, T j=25 °C - 0.82 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 20 nC 4) Rev.1.1 T A=25 °C A See figure 16 for gate charge parameter definition page 3 2009-11-19 BSO033N03MS G 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); t p≤10 s parameter: V GS 3 24 2.5 20 2 16 I D [A] P tot [W] 4.5 V 1.5 12 1 8 0.5 4 0 10 V 0 0 40 80 120 160 0 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C2); D =0 Z thJA=f(t p)2) parameter: t p parameter: D =t p/T 103 102 limited by on-state resistance 0.5 102 10 µs 1 µs 0.2 101 0.1 100 µs 101 Z thJA [K/W] I D [A] 1 ms 10 ms 0.05 100 0.02 0.01 100 ms 100 10-1 10 s 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev.1.1 single pulse 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2009-11-19 BSO033N03MS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 6 4.5 V 180 2.8 V 4V 10 V 5 V 5 160 3V 3.5 V 3.2 V 140 4 R DS(on) [mΩ] I D [A] 120 3.2 V 100 80 3V 3.5 V 4V 4.5 V 3 5V 10 V 2 60 2.8 V 40 1 20 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 60 40 50 60 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 160 160 140 140 120 120 100 100 g fs [S] I D [A] parameter: T j 80 60 60 40 40 150 °C 25 °C 20 20 0 0 0 1 2 3 4 5 0 10 20 30 I D [A] V GS [V] Rev.1.1 80 page 5 2009-11-19 BSO033N03MS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=22 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 6 2.5 5 2 98 % 3 V GS(th) [V] R DS(on) [mΩ] 4 typ 1.5 1 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 25 °C 150 °C 10 2 150 °C, 98% I F [A] C [pF] 103 101 25 °C, 98% Crss 102 100 101 10-1 0 10 20 30 V DS [V] Rev.1.1 0 0.5 1 1.5 2 V SD [V] page 6 2009-11-19 BSO033N03MS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=22 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 25 °C 100 °C 10 24 V 8 I AV [A] V GS [V] 125 °C 1 6 4 2 0.1 0 1 10 100 1000 0 20 40 60 80 100 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev.1.1 page 7 2009-11-19 BSO033N03MS G Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.1 page 8 2009-11-19 BSO033N03MS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.1 page 9 2009-11-19