NPN Silicon AF Transistors SMBTA 05 SMBTA 06 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 55 SMBTA 56 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05 SMBTA 06 s1H s1G Q68000-A3430 Q68000-A3428 B SOT-23 E C Maximum Ratings Parameter Symbol SMBTA 05 Values SMBTA 06 Unit Collector-emitter voltage VCE0 60 80 Collector-base voltage VCB0 60 80 Emitter-base voltage VEB0 Collector current IC 500 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V 4 mA A mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 285 Junction - soldering point Rth JS ≤ 215 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 05 SMBTA 06 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 05 SMBTA 06 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA SMBTA 05 SMBTA 06 V(BR)CB0 Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 Collector-base cutoff current VCB = 60 V VCB = 80 V VCB = 60 V, TA = 150 ˚C VCB = 80 V, TA = 150 ˚C V 60 80 – – – – 60 80 – – – – 4 – – – – – – – – – – 100 100 20 20 nA nA µA µA – – 100 nA ICB0 SMBTA 05 SMBTA 06 SMBTA 05 SMBTA 06 Collector cutoff current VCE = 60 V ICE0 DC current gain1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter saturation voltage1) IC = 100 mA, VCE = 1 V – 100 100 – 130 – 170 VCEsat – – 0.25 VBE – – 1.2 Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz fT – 100 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 12 – pF V AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 SMBTA 05 SMBTA 06 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBTA 05 SMBTA 06 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = VCEmax DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4