INFINEON SMBTA93

PNP Silicon Transistors for High Voltages
SMBTA 92
SMBTA 93
High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: SMBTA 42, SMBTA 43 (NPN)
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
SMBTA 92
SMBTA 93
s2D
s2E
Q68000-A6479
Q68000-A6483
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
SMBTA 92 SMBTA 93
Unit
Collector-emitter voltage
VCE0
300
200
V
Collector-base voltage
VCB0
300
200
Emitter-base voltage
VEB0
Collector current
IC
500
Base current
IB
100
Total power dissipation, TS = 74 ˚C
Ptot
360
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
5
mA
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤
280
Junction - soldering point
Rth JS
≤
210
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 92
SMBTA 93
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
300
200
–
–
–
–
300
200
–
–
–
–
5
–
–
–
–
–
–
–
–
–
–
250
250
20
20
nA
nA
µA
µA
–
–
100
nA
25
40
25
25
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.4
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
SMBTA 92
SMBTA 93
V(BR)CE0
Collector-base breakdown voltage
IC = 100 µA
SMBTA 92
SMBTA 93
V(BR)CB0
Emitter-base breakdown voltage
IE = 100 µA
V(BR)EB0
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 ˚C
VCB = 160 V, TA = 150 ˚C
ICB0
SMBTA 92
SMBTA 93
SMBTA 92
SMBTA 93
Emitter-base cutoff current
VEB = 3 V
IEB0
DC current gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V1)
IC = 30 mA, VCE = 10 V1)
hFE
SMBTA 92
SMBTA 93
V
–
V
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
SMBTA 92
SMBTA 93
VCEsat
Base-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat
–
–
0.9
Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
fT
50
–
–
Output capacitance
VCB = 20 V, f = 1 MHz
Cobo
AC characteristics
1)
SMBTA 92
SMBTA 93
Semiconductor Group
pF
–
–
Pulse test conditions: t ≤ 300 µs, D = 2 %.
2
MHz
–
–
6
8
SMBTA 92
SMBTA 93
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Transition frequency fT = f (IC)
VCE = 20 V, f = 100 MHz
Permissible pulse load Ptot max/Ptot DC = f (tp)
Operating range IC = f (VCE0)
TA = 25 ˚C, D = 0
Semiconductor Group
3
SMBTA 92
SMBTA 93
Collector cutoff current ICB0 = f (TA)
VCB = 160 V
Collector current IC = f (VBE)
VCE = 10 V
DC current gain hFE = f (IC)
VCE = 10 V
Semiconductor Group
4