INFINEON BB512

BB 512
Silicon Variable Capacitance Diode
●
For AM tuning applications
●
Specified tuning range 1 … 8 V
BB 512
Type
Ordering Code
(tape and reel)
Pin Configuration
1
2
Marking
Package
BB 512
Q62702-B479
C
white M
SOD-123
A
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
12
V
Reverse voltage (R ≥ 10 kΩ)
VRM
15
Forward current, TA ≤ 60 ˚C
IF
50
Operating temperature range
Top
– 55 … + 150 ˚C
Storage temperature range
Tstg
– 55 … + 150
Rth JA
≤
mA
Thermal Resistance
Junction - ambient
Semiconductor Group
1
600
K/W
10.94
BB 512
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
–
–
–
–
20
200
440
17.5
470
–
520
34
Reverse current
VR = 10 V
VR = 10 V, TA = 60 ˚C
IR
Diode capacitance, f = 1 MHz
VR = 1 V
VR = 8 V
CT
Capacitance ratio
VR = 1 V, 8 V
CT1
CT8
15
–
–
–
Series resistance
f= 0.5 MHz, VR = 1 V
rs
–
1.4
–
Ω
Figure of merit
f= 0.5 MHz, VR = 1 V
Q
–
480
–
–
Temperature coefficient of diode capacitance
f= 1 MHz, VR = 1 V
TCC
–
500
–
ppm/K
Capacitance matching
VR = 1 … 8 V
∆CT
–
–
3
%
Semiconductor Group
CT
2
nA
pF
BB 512
Diode capacitance CT = f (VR)
Capacitance ratio CT/CTref = f (VR)
Capacitance ratio CT/CT1V = f (VR)
Temperature coefficient of
junction capacitance TCC = f (VR)
Semiconductor Group
3