INFINEON IPB80P03P3L-04

Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
OptiMOS -P Power-Transistor
Product Summary
Feature
-30
VDS
• P-Channel
RDS(on) max. SMD version
• Enhancement mode
• Automotive AEC Q101 qualified
4
ID
• Logic Level
P- TO262 -3-1
V
mΩ
-80
P- TO263 -3-2
A
P- TO220 -3-1
• Green package (lead free)
• MSL1 up to 260°C
peak reflow temperature
• 175°C operating temperature
• Avalanche rated
Drain
pin 2
• dv/dt rated
Type
Package
Ordering Code
IPP80P03P3L-04
P- TO220 -3-1 -
3P03L04
IPB80P03P3L-04
P- TO263 -3-2 -
3P03L04
IPI80P03P3L-04
P- TO262 -3-1 -
3P03L04
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
Gate
pin1
Marking
Source
pin 3
Value
Unit
A
ID
TC=25°C
-80
TC=100°C
-80
I D puls
-320
EAS
432
dv/dt
-6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
200
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID=-80 A , VDD=-25V, RGS=25Ω
Reverse diode dv/dt
kV/µs
IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax =175°C
TC=25°C
Operating and storage temperature
T j , T stg
IEC climatic category; DIN IEC 68-1
55/175/56
Page 1
2004-03-04
Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
0.5
0.75
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
-
40
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-30
-
-
VGS(th)
-1
-1.5
-2
Static Characteristics
Drain-source breakdown voltage
V
V GS=0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID=-430µA
Zero gate voltage drain current
µA
I DSS
V DS=-30V, VGS=0, Tj=25°C
-
-0.1
-1
V DS=-30V, VGS=0, Tj=150°C3)
-
-10
-100
-
± 10
± 100 nA
Gate-source leakage current
I GSS
V GS=±20V, VDS =0
Drain-source on-state resistance 4)
mΩ
RDS(on)
V GS=-4.5V, ID =-50A
-
6.3
7.6
V GS=-4.5V, ID =-50A, SMD version
-
6
7.3
V GS=-10V, I D=-80A
-
3.5
4.3
V GS=-10V, I D=-80A, SMD version
-
3.2
4
Drain-source on-state resistance 4)
RDS(on)
1Current limited by bondwire ; with an R
thJC = 0.75K/W the chip is able to carry ID= 171A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤10 sec.
3Defined by design. Not subject to production test.
4Diagrams are related to straight lead versions
Page 2
2004-03-04
Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Electrical Characteristics
Parameter
Symbol
Conditions
Values
min.
Unit
typ.
max.
125
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS ≥2ID RDS(on)max , 63
ID=-80A
Input capacitance
Ciss
V GS=0, VDS =-25V,
-
7720
-
Output capacitance
Coss
f=1MHz
-
2050
-
Reverse transfer capacitance
Crss
-
1673
-
Turn-on delay time
td(on)
V DD=-15V, VGS=-10V,
-
30
45
Rise time
tr
ID=-1A,
-
45
68
Turn-off delay time
td(off)
RG=6Ω
-
200
300
Fall time
tf
-
180
270
Gate Charge Characteristics
Gate to source charge
Qgs
-
-25
-38
Gate to drain charge
Qgd
-
-85
-128
Gate charge total
Qg
-
-200
-300
V(plateau) VDD =-24V, ID =-80A
-
-3
-
V
IS
-
-
-80
A
-
-
-320
VDD =-24V, ID =-80A
VDD =-24V, ID =-80A,
ns
nC
VGS =0 to -10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
VGS =0, |IF| = |ID|
-
-1.1
-1.3
V
Reverse recovery time
trr
VR =-15V, |IF| = |lD|,
-
60
75
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
75
95
nC
Page 3
2004-03-04
Target data sheet
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BIPP80P03P3L-04, BIPB80P03P3L-04 and BIPI80P03P3L-04, for
simplicity the device is referred to by the term IPP80P03P3L-04, IPB80P03P3L-04 and IPI80P03P3L-04
throughout this documentation
Page 4
2004-03-04