Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS(on) max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V mΩ -80 P- TO263 -3-2 A P- TO220 -3-1 • Green package (lead free) • MSL1 up to 260°C peak reflow temperature • 175°C operating temperature • Avalanche rated Drain pin 2 • dv/dt rated Type Package Ordering Code IPP80P03P3L-04 P- TO220 -3-1 - 3P03L04 IPB80P03P3L-04 P- TO263 -3-2 - 3P03L04 IPI80P03P3L-04 P- TO262 -3-1 - 3P03L04 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) Gate pin1 Marking Source pin 3 Value Unit A ID TC=25°C -80 TC=100°C -80 I D puls -320 EAS 432 dv/dt -6 Gate source voltage VGS ±20 V Power dissipation Ptot 200 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=-80 A , VDD=-25V, RGS=25Ω Reverse diode dv/dt kV/µs IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature T j , T stg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.5 0.75 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - - 40 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -30 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V V GS=0, ID=-250µA Gate threshold voltage, VGS = VDS ID=-430µA Zero gate voltage drain current µA I DSS V DS=-30V, VGS=0, Tj=25°C - -0.1 -1 V DS=-30V, VGS=0, Tj=150°C3) - -10 -100 - ± 10 ± 100 nA Gate-source leakage current I GSS V GS=±20V, VDS =0 Drain-source on-state resistance 4) mΩ RDS(on) V GS=-4.5V, ID =-50A - 6.3 7.6 V GS=-4.5V, ID =-50A, SMD version - 6 7.3 V GS=-10V, I D=-80A - 3.5 4.3 V GS=-10V, I D=-80A, SMD version - 3.2 4 Drain-source on-state resistance 4) RDS(on) 1Current limited by bondwire ; with an R thJC = 0.75K/W the chip is able to carry ID= 171A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. 3Defined by design. Not subject to production test. 4Diagrams are related to straight lead versions Page 2 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Electrical Characteristics Parameter Symbol Conditions Values min. Unit typ. max. 125 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2ID RDS(on)max , 63 ID=-80A Input capacitance Ciss V GS=0, VDS =-25V, - 7720 - Output capacitance Coss f=1MHz - 2050 - Reverse transfer capacitance Crss - 1673 - Turn-on delay time td(on) V DD=-15V, VGS=-10V, - 30 45 Rise time tr ID=-1A, - 45 68 Turn-off delay time td(off) RG=6Ω - 200 300 Fall time tf - 180 270 Gate Charge Characteristics Gate to source charge Qgs - -25 -38 Gate to drain charge Qgd - -85 -128 Gate charge total Qg - -200 -300 V(plateau) VDD =-24V, ID =-80A - -3 - V IS - - -80 A - - -320 VDD =-24V, ID =-80A VDD =-24V, ID =-80A, ns nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF| = |ID| - -1.1 -1.3 V Reverse recovery time trr VR =-15V, |IF| = |lD|, - 60 75 ns Reverse recovery charge Qrr diF/dt=100A/µs - 75 95 nC Page 3 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BIPP80P03P3L-04, BIPB80P03P3L-04 and BIPI80P03P3L-04, for simplicity the device is referred to by the term IPP80P03P3L-04, IPB80P03P3L-04 and IPI80P03P3L-04 throughout this documentation Page 4 2004-03-04