IPB144N12N3 G IPI147N12N3 G OptiMOS™3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 120 V R DS(on),max 14.7 mΩ 56 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 144N12N 147N12N 147N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value Unit T A=25 °C, R thJA=45 K/W 56 T C=100 °C 41 I D,pulse I D=56 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 224 Avalanche energy, single pulse E AS I D=56 A, R GS=25 Ω 90 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 107 W Operating and storage temperature T j, T stg -55 ... 175 °C Pulsed drain current 2) T C=25 °C IEC climatic category; DIN IEC 68-1 1) 55/175/56 J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Rev. 2.6 A page 1 2010-01-22 IPB144N12N3 G IPI147N12N3 G Parameter IPP147N12N3 G Values Symbol Conditions Unit min. typ. max. - - 1.4 minimal footprint - - 62 6 cm2 cooling area 4) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=61 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=56 A, (TO263) - 12.3 14.4 mΩ V GS=10 V, I D=56 A, (TO220, TO262) - 12.6 14.7 - 1.2 - Ω 31 62 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=56 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.6 page 2 2010-01-22 IPB144N12N3 G IPI147N12N3 G Parameter IPP147N12N3 G Values Symbol Conditions Unit min. typ. max. - 2420 3220 - 304 404 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 17 - Turn-on delay time t d(on) - 16 - Rise time tr - 9 - Turn-off delay time t d(off) - 24 - Fall time tf - 4 - Gate to source charge Q gs - 13 - Gate to drain charge Q gd - 9 - - 15 - V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=56 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=60 V, I D=56 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 37 49 Gate plateau voltage V plateau - 5.5 - Output charge Q oss - 42 55 nC - - 56 A - - 224 - 1 1.2 - 91 - 259 V DD=60 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 2.6 T C=25 °C V GS=0 V, I F=56 A, T j=25 °C V R=60 V, I F=I S, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition page 3 2010-01-22 IPB144N12N3 G IPI147N12N3 G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 60 100 50 80 40 I D [A] P tot [W] 1 Power dissipation 60 30 40 20 20 10 0 IPP147N12N3 G 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs 102 10 µs 100 100 µs Z thJC [K/W] 0.5 I D [A] 1 ms DC 101 10 ms 0.2 0.1 10-1 0.01 100 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.6 0.05 0.02 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-01-22 IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 25 10 V 5V 8V 5.5 V 20 7V 6V R DS(on) [mΩ] I D [A] 150 6.5 V 100 15 10 V 10 6V 50 5.5 V 5 5V 4.5 V 0 0 0 1 2 3 4 5 0 20 40 V DS [V] 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 80 70 80 60 50 I D [A] g fs [S] 60 40 40 30 20 20 175 °C 25 °C 10 0 0 0 2 4 6 8 Rev. 2.6 0 10 20 30 40 50 60 I D [A] V GS [V] page 5 2010-01-22 IPB144N12N3 G IPI147N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=56 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPP147N12N3 G parameter: I D 35 4 30 3.5 610 µA 3 25 20 V GS(th) [V] R DS(on) [mΩ] 61 µA 2.5 98 % 15 typ 2 1.5 10 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 25 °C 102 Coss I F [A] C [pF] 175 °C 25 °C, 98% 175 °C, 98% 102 101 Crss 101 100 0 20 40 60 80 V DS [V] Rev. 2.6 0 0.5 1 1.5 2 V SD [V] page 6 2010-01-22 IPB144N12N3 G IPI147N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=56 A pulsed parameter: T j(start) parameter: V DD 102 IPP147N12N3 G 10 96 V 8 60 V 25 °C 24 V 6 V GS [V] I AS [A] 100 °C 101 150 °C 4 2 100 0 100 101 102 103 0 10 t AV [µs] 20 30 40 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 V BR(DSS) [V] 125 120 V g s(th) 115 110 Q g(th) Q sw Q gs 105 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.6 page 7 2010-01-22 IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G PG-TO220-3: Outline Rev. 2.6 page 8 2010-01-22 IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G PG-TO262-3-1 (I²PAK) Rev. 2.6 page 9 2010-01-22 IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G PG-TO-263 (D²-Pak) Rev. 2.6 page 10 2010-01-22 IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 page 11 2010-01-22