BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ,R2=10kΩ) Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 50 DC collector current IC 500 mA Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg V - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 325 RthJS ≤ 215 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 583 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 100 µA, IB = 0 Collector-base breakdown voltage nA - 100 mA - 0.75 hFE 70 - - VCEsat V - - 0.3 0.6 0 1.5 1.1 - 2.5 Vi(off) IC = 100 µA, VCE = 5 V Input on Voltage - - IC = 50 mA, IB = 2.5 mA Input off voltage 50 IEBO IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage 1) - - VEB = 10 V, IC = 0 DC current gain - ICBO VCB = 40 V, IE = 0 Emitter cutoff current 50 V(BR)CBO IC = 10 µA, IB = 0 Collector cutoff current V Vi(on) IC = 10 mA, VCE = 0.3 V Input resistor R1 7 10 13 kΩ Resistor ratio R1/R2 0.9 1 1.1 - AC Characteristics Transition frequency fT IC = 50 mA, VCE = 5 V, f = 100 MHz MHz - 150 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-27-1996 BCR 583 DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 3 mA hFE IC 10 2 10 2 10 1 10 1 10 0 10 -1 -1 10 10 0 10 1 10 2 10 0 0.0 mA 0.2 0.4 0.6 V IC Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) 1.0 V CEsat Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 3 10 1 mA mA IC 10 2 IC 10 0 10 1 10 0 10 -1 10 -1 10 -2 -1 10 10 0 10 1 10 -2 0.0 V V i(on) Semiconductor Group 0.5 1.0 V 2.0 V i(off) 3 Nov-27-1996 BCR 583 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 400 mW Ptot TS 300 TA 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 4 K/W RthJS - Ptotmax/PtotDC 10 3 10 2 10 1 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 Semiconductor Group 10 -4 10 -3 10 10 1 -2 -1 10 s 10 tp 0 4 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-27-1996