BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor ( R1 =10kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration BCR 135 WJs Q62702-C2257 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 102 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature Tstg 65...+150 RthJA ≤ 350 RthJS ≤ 240 V Thermal Resistance Junction ambient 1) Junction - soldering point K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group 1 Jun-18-1997 BCR 135 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - Collector-base breakdown voltage V(BR)CBO 50 - - IC = 10 µA, IB = 0 Collector cutoff current ICBO - - 100 nA VCB = 40 V, IE = 0 Emitter cutoff current IEBO - - 167 µA hFE 70 - - - - - 0.3 V Vi(off) 0.5 - 1 Vi(on) 0.5 - 1.4 7 10 13 0.19 0.21 0.24 fT - 150 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 Resistor ratio R1/R2 kΩ - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Jun-18-1997 BCR 135 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20 10 10 2 3 mA h FE 10 IC 2 10 1 10 1 10 0 10 -1 10 0 10 1 10 0 0.0 mA 0.2 0.4 V 0.6 IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 10 1 2 mA mA 10 0 IC 10 10 10 IC 1 10 -1 10 -2 10 -3 0 -1 10 -1 10 0 10 1 V 0.0 Vi(on) Semiconductor Group 0.5 1.0 V 2.0 Vi(off) 3 Jun-18-1997 BCR 135 Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 K/W - 10 2 Ptotmax / PtotDC R thJS 10 10 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 10 1 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-18-1997