Product Overview

Product Overview
NCP5106: MOSFET / IGBT Drivers, High Voltage, High and Low Side
For complete documentation, see the data sheet
Product Description
The NCP5106 is a High Voltage gate Driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs
arranged in a half-bridge configuration version B or any other high-side + low-side configuration version A.
It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs.
NCP5109 = 200V
NCP5106 = 600V
Features
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High Voltage Range: Up to 600 V
dV/dt Immunity ± 50 V/nsec
Gate Drive Supply Range from 10 V to 20 V
High and Low Drive Outputs
Output Source / Sink Current Capability 250 mA / 500 mA
3.3 V and 5 V Input Logic Compatible
Up to Vcc Swing on Input Pins
Matched Propagation Delays Between Both Channels
Outputs in Phase with the Inputs
Independent Logic Inputs to Accommodate All Topologies (Version A)
For more features, see the data sheet
Applications
• Half-Bridge Power Converters
• Any Complementary Drive Converters (Asymmetrical Half-Bridge, Active Clamp) (A version only).
• Full-Bridge Converters
Part Electrical Specifications
Product
Compliance
Status
Type
Number of
Drivers
Vin Max
(V)
VCC Max
(V)
Drive
Source/Si
nk Typ
(mA)
Rise Time
(ns)
Fall Time
(ns)
tp Max (ns) Package
Type
NCP5106ADR2G
PPAP
Capable
Active
MOSFET
or IGBT
2
600
23
250 / 500
85
35
170
SOIC-8
Active
MOSFET
or IGBT
2
600
23
250 / 500
85
35
170
PDIP-8
Active
MOSFET
or IGBT
2
600
23
250 / 500
85
35
170
SOIC-8
Active
MOSFET
or IGBT
2
600
23
250 / 500
85
35
170
PDIP-8
Pb-free
Halide free
NCP5106APG
PPAP
Capable
Pb-free
Halide free
NCP5106BDR2G
PPAP
Capable
Pb-free
Halide free
NCP5106BPG
PPAP
Capable
Pb-free
Halide free
Application Diagram
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016