Product Overview NCP5111: Power MOSFET / IGBT Driver, Single Input, Half-Bridge For complete documentation, see the data sheet Product Description The NCP5111 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the High-side power switch. Features • • • • • • • • • • High Voltage Range: Up to 600V dV/dt Immunity ±50 V/ns Gate Drive Supply Range from 10 V to 20 V High and Low Drive Outputs Output Source / Sink Current Capability 250 mA / 500 mA 3.3 V and 5 V Input Logic Compatible Up to Vcc Swing on Input Pins Matched Propagation Delays Between Both Channels One Input with Internal Fixed Dead Time (650 ns) Under Vcc LockOut (UVLO) for Both Channels For more features, see the data sheet Applications • Half Bridge Power Converters Part Electrical Specifications Product Compliance Status Type Number of Drivers Vin Max (V) VCC Max (V) Drive Source/Si nk Typ (mA) Rise Time (ns) Fall Time (ns) tp Max (ns) Package Type NCP5111DR2G PPAP Capable Active MOSFET or IGBT 2 600 23 250 / 500 85 35 170 SOIC-8 Active MOSFET or IGBT 2 600 23 250 / 500 85 35 170 PDIP-8 Pb-free Halide free NCP5111PG PPAP Capable Pb-free Halide free Application Diagram For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016