Product Overview NCP5109: MOSFET / IGBT Drivers, Dual Input, High Voltage, High and Low Side, 200 V For complete documentation, see the data sheet Product Description The NCP5109 is a High Voltage gate Driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration version B or any other high-side + low-side configuration version A. It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs. NCP5109 = 200V NCP5106 = 600V Features • • • • • • • • • • High Voltage Range: Up to 200 V dV/dt Immunity 50 V/nsec Gate Drive Supply Range from 10 V to 20 V High and Low Drive Outputs Output Source / Sink Current Capability 250 mA / 500 mA 3.3 V and 5 V Input Logic Compatible Up to Vcc Swing on Input Pins Matched Propagation Delays Between Both Channels Outputs in Phase with the Inputs Independent Logic Inputs to Accommodate All Topologies (Version A) For more features, see the data sheet Applications End Products • Current Fed push-pull converters • Half and Full Bridge power converters • Two switch forward power converters • Solid state motor drives Part Electrical Specifications Product Compliance Status Type Number of Drivers Vin Max (V) VCC Max (V) Drive Source/Si nk Typ (mA) Rise Time (ns) Fall Time (ns) tp Max (ns) Package Type NCP5109ADR2G PPAP Capable Active MOSFET or IGBT 2 200 23 250 / 500 85 35 170 SOIC-8 Active MOSFET or IGBT 2 200 23 250 / 500 85 35 170 SOIC-8 Pb-free Halide free NCP5109BDR2G PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016