BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC636[2] SOT54 SC-43A TO-92 BC635 BCP51 SOT223 SC-73 - BCP54 BCX51 SOT89 SC-62 TO-243 BCX54 [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features n High current n Two current gain selections n High power dissipation capability 1.3 Applications n n n n Linear voltage regulators High-side switches MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −45 V IC collector current - - −1 A ICM peak collector current single pulse; tp ≤ 1 ms - - −1.5 A hFE DC current gain VCE = −2 V; IC = −150 mA 63 - 250 hFE selection -10 VCE = −2 V; IC = −150 mA 63 - 160 hFE selection -16 VCE = −2 V; IC = −150 mA 100 - 250 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 base 2 collector 3 emitter 2 1 2 3 1 3 001aab347 sym029 SOT54A 1 base 2 collector 3 emitter 2 1 2 1 3 3 001aab348 sym029 SOT54 variant 1 base 2 collector 3 emitter 2 1 2 3 1 3 001aab447 sym029 SOT223 1 base 2 collector 3 emitter 4 collector 4 2, 4 1 1 2 3 3 sym028 SOT89 1 emitter 2 collector 3 base 2 3 3 2 1 1 006aaa231 BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 2 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BC636[2] SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BCP51 SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BCX51 SC-62 plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3 leads [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Type number Marking code BC636 C636 BC636-10 C63610 BCP51 BCP51 BCP51-10 BCP51/10 BCP51-16 BCP51/16 BCX51 AA BCX51-10 AC BCX51-16 AD BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 3 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −45 V VCEO collector-emitter voltage open base - −45 V VEBO emitter-base voltage open collector - −5 V IC collector current - −1 A ICM peak collector current single pulse; tp ≤ 1 ms - −1.5 A IBM peak base current single pulse; tp ≤ 1 ms - −0.2 A Ptot total power dissipation Tamb ≤ 25 °C BC636 [1] - 0.83 W BCP51 [1] - 0.65 W [2] - 1 W [1] - 0.5 W [2] - 0.9 W [3] - 1.3 W BCX51 Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 4 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa219 1.6 006aaa220 1.6 Ptot (W) Ptot (W) 1.2 1.2 (1) 0.8 0.8 (2) 0.4 0 −75 0.4 −25 0 25 75 0 −75 125 175 Tamb (°C) −25 0 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 FR4 PCB, standard footprint (2) FR4 PCB, standard footprint Fig 1. Power derating curve SOT54 Fig 2. Power derating curves SOT223 006aaa221 1.6 Ptot (W) (1) 1.2 (2) 0.8 (3) 0.4 0 −75 −25 0 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 3. Power derating curves SOT89 BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 5 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit BC636 [1] - - 150 K/W BCP51 [1] - - 190 K/W [2] - - 125 K/W [1] - - 230 K/W [2] - - 135 K/W [3] - - 95 K/W BC636 - - 40 K/W BCP51 - - 17 K/W BCX51 - - 20 K/W BCX51 thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 006aaa222 103 Zth(j-a) (K/W) duty cycle = 102 1 0.5 0.75 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54; typical values BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 6 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa223 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aaa817 103 duty cycle = Zth(j-a) (K/W) 102 10 1.0 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 7 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa224 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aaa225 103 Zth(j-a) (K/W) duty cycle = 102 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 8 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa818 103 duty cycle = Zth(j-a) (K/W) 102 1.0 10 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −100 nA VCB = −30 V; IE = 0 A; Tj = 150 °C - - −10 µA - - −100 nA 63 - - 63 - 250 40 - - 63 - 160 IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain VCE = −2 V IC = −5 mA IC = −150 mA IC = −500 mA DC current gain VCE = −2 V hFE selection -10 IC = −150 mA hFE selection -16 IC = −150 mA 100 - 250 - - −0.5 V - - −1 V VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] VBE base-emitter voltage VCE = −2 V; IC = −500 mA [1] Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 15 - pF fT transition frequency VCE = −5 V; IC = −50 mA; f = 100 MHz - 145 - MHz [1] Pulse test: tp ≤ 300 µs; δ = 0.02. BC636_BCP51_BCX51_8 Product data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 9 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa226 300 IB (mA) = −45 −40.5 −36 IC (A) (1) hFE 006aaa230 −1.6 −31.5 −27 −22.5 −1.2 200 −18 −13.5 (2) −0.8 (3) −0.4 −9 100 0 −10−1 −1 −10 −4.5 −102 −103 −104 I C (mA) VCE = −2 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. DC current gain as a function of collector current; typical values 006aaa227 −1200 Fig 11. Collector current as a function of collector-emitter voltage; typical values 006aaa228 −103 VBE (mV) −1000 VCEsat (mV) (1) −800 −102 (2) −600 (2) (3) (1) −400 (3) −200 −10−1 −1 −10 −102 −103 −104 I C (mA) VCE = −2 V −10 −10−1 −1 −102 −103 −104 I C (mA) IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = −55 °C Fig 12. Base-emitter voltage as a function of collector current; typical values Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values BC636_BCP51_BCX51_8 Product data sheet −10 © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 10 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 8. Package outline 0.45 0.38 4.2 3.6 0.45 0.38 4.2 3.6 0.48 0.40 3 max 1 0.48 0.40 1 2 4.8 4.4 2 4.8 4.4 2.54 5.08 1.27 3 2.54 3 5.2 5.0 14.5 12.7 5.2 5.0 Dimensions in mm 04-11-16 Fig 14. Package outline SOT54 (SC-43A/TO-92) 14.5 12.7 Dimensions in mm 04-06-28 Fig 15. Package outline SOT54A 0.45 0.38 4.2 3.6 6.7 6.3 3.1 2.9 1.27 1.8 1.5 4 2.5 max 1.1 0.7 0.48 0.40 1 7.3 6.7 3.7 3.3 2 4.8 4.4 2.54 1.27 3 1 5.2 5.0 14.5 12.7 2 2.3 4.6 Dimensions in mm 05-01-10 Fig 16. Package outline SOT54 variant 3 0.32 0.22 0.8 0.6 Dimensions in mm 04-11-10 Fig 17. Package outline SOT223 (SC-73) 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 0.53 0.40 1.5 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 18. Package outline SOT89 (SC-62/TO-243) BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 11 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package Description Packing quantity 1000 BC636 4000 5000 10000 SOT54 bulk, straight leads - - -412 - SOT54A tape and reel, wide pitch - - - -116 tape ammopack, wide pitch - - - -126 SOT54 variant bulk, delta pinning - - -112 - BCP51 SOT223 8 mm pitch, 12 mm tape and reel -115 -135 - - BCX51 SOT89 8 mm pitch, 12 mm tape and reel; T1 [3] -115 -135 - - 8 mm pitch, 12 mm tape and reel; T3 [4] -120 - - - [1] For further information and the availability of packing methods, see Section 12. [2] Valid for all available selection groups. [3] T1: normal taping [4] T3: 90° rotated taping BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 12 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BC636_BCP51_BCX51_8 20080222 Product data sheet - BC636_BCP51_BCX51_7 Modifications: • Figure 11: amended BC636_BCP51_BCX51_7 20070629 Product data sheet - BC636_BCP51_BCX51_6 BC636_BCP51_BCX51_6 20060329 Product data sheet - BC636_638_640_5 BCP51_52_53_5 BCX51_52_53_4 BC636_638_640_5 20041011 Product specification - BC636_638_640_4 BCP51_52_53_5 20030206 Product specification - BCP51_52_53_4 BCX51_52_53_4 20011010 Product specification - BCX51_52_53_3 BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 13 of 15 BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BC636_BCP51_BCX51_8 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 08 — 22 February 2008 14 of 15 NXP Semiconductors BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 February 2008 Document identifier: BC636_BCP51_BCX51_8