PHILIPS BAS19

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 26
Philips Semiconductors
Product specification
General purpose diodes
FEATURES
• Small plastic SMD package
BAS19; BAS20; BAS21
PINNING
MARKING
TYPE NUMBER
MARKING
CODE (1)
PIN
1
anode
• General application
BAS19
JP∗
2
not connected
• Continuous reverse voltage:
max. 100 V; 150 V; 200 V
BAS20
JR∗
3
cathode
BAS21
JS∗
• Switching speed: max. 50 ns
• Repetitive peak reverse voltage:
max. 120 V; 200 V; 250 V
• Repetitive peak forward current:
max. 625 mA.
DESCRIPTION
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
handbook, halfpage
2
1
2
n.c.
DESCRIPTION
The BAS19, BAS20, BAS21 are
general purpose diodes fabricated in
planar technology, and encapsulated
in small SOT23 plastic SMD
packages.
1999 May 26
1
3
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
2
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
BAS19
−
120
V
BAS20
−
200
V
BAS21
−
250
V
BAS19
−
100
V
BAS20
−
150
V
BAS21
−
200
V
−
200
mA
−
625
mA
t = 1 µs
−
9
A
t = 100 µs
−
3
A
t = 10 ms
−
1.7
A
−
250
mW
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
3
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
BAS19
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 100 mA
1
V
IF = 200 mA
1.25
V
see Fig.5
VR = 100 V
100
nA
VR = 100 V; Tj = 150 °C
100
µA
BAS20
VR = 150 V
100
nA
VR = 150 V; Tj = 150 °C
100
µA
BAS21
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
5
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
4
VALUE
UNIT
330
K/W
500
K/W
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
GRAPHICAL DATA
MBG442
300
MBG384
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
100
200
(1)
0
0
0
100
Tamb (oC)
200
1
(3)
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
(2)
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
5
104
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
MBG381
2
10halfpage
handbook,
Cd
(pF)
IR
(µA)
0.8
10
(1)
1
10
(2)
0.6
1
0.4
10 2
100
0
0.2
Tj (oC)
0
200
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
Fig.5
Reverse current as a function of
junction temperature.
Fig.6
MBG445
300
VR
(V)
(1)
(2)
(3)
100
0
0
100
Tamb (oC)
200
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7
Maximum permissible continuous reverse
voltage as a function of the
ambient temperature.
1999 May 26
2
4
6
VR (V)
8
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
200
MBG447
1.0
handbook, halfpage
6
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
handbook, full pagewidth
tr
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 26
t rr
7
output signal
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 May 26
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26
9
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
NOTES
1999 May 26
10
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
NOTES
1999 May 26
11
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© Philips Electronics N.V. 1999
SCA 65
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Printed in The Netherlands
115002/03/pp12
Date of release: 1999 May 26
Document order number:
9397 750 05885