DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS19; BAS20; BAS21 General purpose diodes Product specification Supersedes data of 1996 Sep 10 1999 May 26 Philips Semiconductors Product specification General purpose diodes FEATURES • Small plastic SMD package BAS19; BAS20; BAS21 PINNING MARKING TYPE NUMBER MARKING CODE (1) PIN 1 anode • General application BAS19 JP∗ 2 not connected • Continuous reverse voltage: max. 100 V; 150 V; 200 V BAS20 JR∗ 3 cathode BAS21 JS∗ • Switching speed: max. 50 ns • Repetitive peak reverse voltage: max. 120 V; 200 V; 250 V • Repetitive peak forward current: max. 625 mA. DESCRIPTION Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. APPLICATIONS • General purpose switching in e.g. surface mounted circuits. handbook, halfpage 2 1 2 n.c. DESCRIPTION The BAS19, BAS20, BAS21 are general purpose diodes fabricated in planar technology, and encapsulated in small SOT23 plastic SMD packages. 1999 May 26 1 3 3 MAM185 Fig.1 Simplified outline (SOT23) and symbol. 2 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BAS19 − 120 V BAS20 − 200 V BAS21 − 250 V BAS19 − 100 V BAS20 − 150 V BAS21 − 200 V − 200 mA − 625 mA t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A − 250 mW continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 26 3 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BAS19 CONDITIONS MAX. UNIT see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V see Fig.5 VR = 100 V 100 nA VR = 100 V; Tj = 150 °C 100 µA BAS20 VR = 150 V 100 nA VR = 150 V; Tj = 150 °C 100 µA BAS21 VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 26 4 VALUE UNIT 330 K/W 500 K/W Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 GRAPHICAL DATA MBG442 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 (1) 0 0 0 100 Tamb (oC) 200 1 (3) 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 26 5 104 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 MBG381 2 10halfpage handbook, Cd (pF) IR (µA) 0.8 10 (1) 1 10 (2) 0.6 1 0.4 10 2 100 0 0.2 Tj (oC) 0 200 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. Fig.5 Reverse current as a function of junction temperature. Fig.6 MBG445 300 VR (V) (1) (2) (3) 100 0 0 100 Tamb (oC) 200 (1) BAS21. (2) BAS20. (3) BAS19. Fig.7 Maximum permissible continuous reverse voltage as a function of the ambient temperature. 1999 May 26 2 4 6 VR (V) 8 f = 1 MHz; Tj = 25 °C. handbook, halfpage 200 MBG447 1.0 handbook, halfpage 6 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1999 May 26 t rr 7 output signal Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 26 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 26 9 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 NOTES 1999 May 26 10 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 NOTES 1999 May 26 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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