DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 1999 May 11 Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION • Small plastic SMD package The PMBD6100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 70 V PINNING PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 450 mA. 2 handbook, 4 columns 1 APPLICATIONS 2 • High-speed switching in surface mounted circuits. 1 3 3 MAM108 Top view Marking code: p5B = made in Hong Kong; t5B = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 70 V IF continuous forward current single diode loaded; note 1; see Fig.2 − 215 mA double diode loaded; note 1; see Fig.2 − 125 mA − 450 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11 2 Philips Semiconductors Product specification High-speed double diode PMBD6100 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 550 700 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 100 mA 0.85 1.1 V see Fig.5 VR = 50 V − 100 nA VR = 50 V; Tj = 150 °C − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11 3 VALUE UNIT 360 K/W 500 K/W Philips Semiconductors Product specification High-speed double diode PMBD6100 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 11 4 104 Philips Semiconductors Product specification High-speed double diode PMBD6100 MBG379 2 10halfpage handbook, Cd (pF) IR (µA) 0.6 10 (1) 1 10 MBG446 0.8 handbook, halfpage (2) (3) 0.4 1 0.2 10 2 0 100 Tj (oC) 0 0 200 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1999 May 11 5 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode PMBD6100 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1999 May 11 6 t tp output signal Philips Semiconductors Product specification High-speed double diode PMBD6100 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 11 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification High-speed double diode PMBD6100 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 11 8 Philips Semiconductors Product specification High-speed double diode PMBD6100 NOTES 1999 May 11 9 Philips Semiconductors Product specification High-speed double diode PMBD6100 NOTES 1999 May 11 10 Philips Semiconductors Product specification High-speed double diode PMBD6100 NOTES 1999 May 11 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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