PHILIPS 2N4403

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N4403
PNP switching transistor
Product specification
Supersedes data of 1997 May 05
1999 Apr 23
Philips Semiconductors
Product specification
PNP switching transistor
2N4403
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
collector
2
base
3
emitter
• Industrial and consumer switching applications.
DESCRIPTION
handbook, halfpage1
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N4401.
1
2
3
2
MAM280
Fig.1
3
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
Ptot
total power dissipation
Tstg
V
−
−200
mA
−
630
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
1999 Apr 23
Tamb ≤ 25 °C
2
Philips Semiconductors
Product specification
PNP switching transistor
2N4403
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
200
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0 mA; VCB = −40 V
−
−50
nA
emitter cut-off current
IC = 0 mA; VEB = −5 V
−
−50
nA
DC current gain
VCE = −1 V; see Fig.2
30
−
IC = −1 mA
60
−
IC = −10 mA
100
−
100
300
ICBO
collector cut-off current
IEBO
hFE
IC = −0.1 mA
VCE = −2 V
IC = −150 mA
IC = −500 mA
VCEsat
VBEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
20
−
IC = −150 mA; IB = −15 mA
−
−400
mV
IC = −500 mA; IB = −50 mA
−
−750
mV
IC = −150 mA; IB = −15 mA
−
−950
mV
IC = −500 mA; IB = −50 mA
−
−1.3
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
8.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
30
pF
fT
transition frequency
IC = −20 mA; VCE = −10 V; f = 100 MHz 200
−
MHz
Switching times (between 10% and 90% levels); see Fig.3
−
40
ns
−
15
ns
rise time
−
30
ns
toff
turn-off time
−
350
ns
ts
storage time
−
300
ns
tf
fall time
−
50
ns
ton
turn-on time
td
delay time
tr
1999 Apr 23
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
3
Philips Semiconductors
Product specification
PNP switching transistor
2N4403
MGD812
300
handbook, full pagewidth
hFE
VCE = −1 V
200
100
0
−10−1
−1
−10
−102
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
oscilloscope
VCC
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 23
4
oscilloscope
IC mA
−103
Philips Semiconductors
Product specification
PNP switching transistor
2N4403
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 Apr 23
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
PNP switching transistor
2N4403
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
6
Philips Semiconductors
Product specification
PNP switching transistor
2N4403
NOTES
1999 Apr 23
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 23
Document order number:
9397 750 05389