DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors Product specification Supersedes data of 1997 May 07 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A FEATURES PINNING • Low current (max. 200 mA) PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching applications. DESCRIPTION handbook, halfpage1 NPN switching transistor in a TO-92; SOT54 plastic package. 1 2 3 2 MAM279 Fig.1 3 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 200 mA ICM peak collector current − 300 mA IBM peak base current − 100 mA Ptot total power dissipation − 500 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C 1999 Apr 14 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − − 400 ICBO collector cut-off current IE = 0; VCB = 20 V; Tamb = 125 °C − − 30 µA IEBO emitter cut-off current IC = 0; VEB = 4 V − − 100 nA hFE DC current gain IC = 10 mA; VCE = 1 V 40 − 120 IC = 10 mA; VCE = 1 V; Tamb = −55 °C 20 − − IC = 100 mA; VCE = 2 V 20 − − IC = 10 mA; VCE = 350 mV 40 − 120 IC = 10 mA; VCE = 350 mV; Tamb = −55 °C 20 − − IC = 30 mA; VCE = 400 mV 30 − − IC = 100 mA; VCE = 1 V 20 − − − − 250 mV − − 200 mV − − 300 mV PN2369 DC current gain PN2369A VCEsat IE = 0; VCB = 20 V MIN. collector-emitter saturation voltage IC = 10 mA; IB = 1 mA nA PN2369 collector-emitter saturation voltage IC = 10 mA; IB = 1 mA PN2369A IC = 10 mA; IB = 10 mA IC = 30 mA; IB = 3 mA − − 250 mV IC = 100 mA; IB = 10 mA − − 500 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 700 − 850 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − − 4 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 500 − − MHz Switching times (between 10% and 90% levels); (see Fig.2) − 8 10 ns − − 4 ns rise time − − 6 ns toff turn-off time − 10 20 ns ts storage time − − 10 ns tf fall time − − 10 ns ton turn-on time td delay time tr 1999 Apr 14 ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA 3 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 0.5 V to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 1 ns. R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω. VBB = 0.2 V; VCC = 2.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1999 Apr 14 4 oscilloscope Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 14 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 14 6 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A NOTES 1999 Apr 14 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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