74HC00; 74HCT00 Quad 2-input NAND gate Rev. 04 — 11 January 2010 Product data sheet 1. General description The 74HC00; 74HCT00 are high-speed Si-gate CMOS devices that comply with JEDEC standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL). The 74HC00; 74HCT00 provides a quad 2-input NAND function. 2. Features Input levels: For 74HC00: CMOS level For 74HCT00: TTL level ESD protection: HBM JESD22-A114F exceeds 2 000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Ordering information Table 1. Ordering information Type number 74HC00N Package Temperature range Name Description Version −40 °C to +125 °C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 −40 °C to +125 °C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 −40 °C to +125 °C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 −40 °C to +125 °C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 −40 °C to +125 °C DHVQFN14 plastic dual in-line compatible thermal enhanced very SOT762-1 thin quad flat package; no leads; 14 terminals; body 2.5 × 3 × 0.85 mm 74HCT00N 74HC00D 74HCT00D 74HC00DB 74HCT00DB 74HC00PW 74HCT00PW 74HC00BQ 74HCT00BQ 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 4. Functional diagram 1 1 1A 2 1B 1Y 3 4 2A 5 2B 2Y 6 9 3A 10 3B 3Y 8 12 4A 13 4B 4Y 11 2 4 5 9 10 12 13 & 3 & 6 & 8 A Y 11 & B mna212 Fig 1. mna211 mna246 Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate) 5. Pinning information 5.1 Pinning 74HC00 74HCT00 1 1A terminal 1 index area 2 13 4B 2 13 4B 1Y 3 12 4A 4 11 4Y 1Y 3 12 4A 2A 2A 4 11 4Y 2B 5 2B 5 10 3B 2Y 6 2Y 6 9 3A 8 1B 1B GND 7 8 3Y 3Y 14 VCC 7 1 GND 1A 14 VCC 74HC00 74HCT00 GND(1) 10 3B 9 3A 001aal324 Transparent top view 001aal323 (1) The substrate is attached to this pad using conductive die attach material. It can not be used as supply pin or input. It is recommended that no connection is made at all. Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 Fig 5. Pin configuration DHVQFN14 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10, 13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 2 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 6. Functional description Table 3. Function table[1] Input Output nA nB nY L X H X L H H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI < −0.5 V or VI > VCC + 0.5 V [1] IOK output clamping current VO < −0.5 V or VO > VCC + 0.5 V [1] IO output current −0.5 V < VO < VCC + 0.5 V ICC IGND Tstg storage temperature Ptot Conditions Min Max Unit −0.5 +7 V - ±20 mA - ±20 mA - ±25 mA supply current - 50 mA ground current −50 - mA −65 +150 °C DIP14 package - 750 mW SO14, (T)SSOP14 and DHVQFN14 packages - 500 mW [2] total power dissipation [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 °C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 °C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 °C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 °C. 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC00 74HCT00 Unit Min Typ Max Min Typ Max 2.0 5.0 6.0 4.5 5.0 5.5 V VCC supply voltage VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 3 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate Table 5. Recommended operating conditions …continued Voltages are referenced to GND (ground = 0 V) …continued Symbol Parameter Conditions 74HC00 Min Δt/ΔV input transition rise and fall rate 74HCT00 Typ Max Min Typ Unit Max VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 °C Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max VCC = 2.0 V - 1.2 - 1.5 - 1.5 - V VCC = 4.5 V - 2.4 - 3.15 - 3.15 - V VCC = 6.0 V - 3.2 - 4.2 - 4.2 - V VCC = 2.0 V - 0.8 - - 0.5 - 0.5 V VCC = 4.5 V - 2.1 - - 1.35 - 1.35 V VCC = 6.0 V - 2.8 - - 1.8 - 1.8 V IO = −20 μA; VCC = 2.0 V - 2.0 - 1.9 - 1.9 - V IO = −20 μA; VCC = 4.5 V - 4.5 - 4.4 - 4.4 - V IO = −20 μA; VCC = 6.0 V - 6.0 - 5.9 - 5.9 - V IO = −4.0 mA; VCC = 4.5 V - 4.32 - 3.84 - 3.7 - V IO = −5.2 mA; VCC = 6.0 V - 5.81 - 5.34 - 5.2 - V IO = 20 μA; VCC = 2.0 V - 0 - - 0.1 - 0.1 V IO = 20 μA; VCC = 4.5 V - 0 - - 0.1 - 0.1 V IO = 20 μA; VCC = 6.0 V - 0 - - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 - - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 - - 0.33 - 0.4 V 74HC00 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - - - ±1 - ±1 μA ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - - - 20 - 40 μA CI input capacitance - 3.5 - - - - - pF 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 4 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 °C Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max 74HCT00 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V - 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 - - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 μA - 4.5 - 4.4 - 4.4 - V IO = −4.0 mA - 4.32 - 3.84 - 3.7 - V IO = 20 μA; VCC = 4.5 V - 0 - - 0.1 - 0.1 V IO = 5.2 mA; VCC = 6.0 V - 0.15 - - 0.33 - 0.4 V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V II input leakage current VI = VCC or GND; VCC = 6.0 V - - - - ±1 - ±1 μA ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - - - 20 - 40 μA ΔICC additional supply current per input pin; VI = VCC − 2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 150 - - 675 - 735 μA CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter 25 °C Conditions −40 °C to +125 °C Unit Min Typ Max Max (85 °C) Max (125 °C) VCC = 2.0 V - 25 - 115 135 ns VCC = 4.5 V - 9 - 23 27 ns VCC = 5.0 V; CL = 15 pF - 7 - - - ns VCC = 6.0 V - 7 - 20 23 ns VCC = 2.0 V - 19 - 95 110 ns VCC = 4.5 V - 7 - 19 22 ns VCC = 6.0 V - 6 - 16 19 ns - 22 - - - pF 74HC00 tpd tt CPD propagation delay nA, nB to nY; see Figure 6 transition time power dissipation capacitance [1] [2] see Figure 6 per package; VI = GND to VCC [3] 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 5 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter 25 °C Conditions −40 °C to +125 °C Unit Min Typ Max Max (85 °C) Max (125 °C) - 12 - 24 29 ns 74HCT00 tpd [1] propagation delay nA, nB to nY; see Figure 6 VCC = 4.5 V - 10 - - - ns tt transition time VCC = 4.5 V; see Figure 6 VCC = 5.0 V; CL = 15 pF [2] - - - 29 22 ns CPD power dissipation capacitance per package; VI = GND to VCC − 1.5 V [3] - 22 - - - pF [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in μW): PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑ (CL × VCC2 × fo) = sum of outputs. 11. Waveforms VI nA, nB input VM GND tPHL VOH tPLH VY VM VX nY output VOL tTHL tTLH 001aai814 Measurement points are given in Table 9. VOL and VOH are typical voltage output levels that occur with the output load. Fig 6. Table 8. Input to output propagation delays Measurement points Type Input Output VM VM VX VY 74HC00 0.5VCC 0.5VCC 0.1VCC 0.9VCC 74HCT00 1.3 V 1.3 V 0.1VCC 0.9VCC 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 6 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate VI negative pulse tW 90 % VM GND tf tr tr tf VI 90 % positive pulse GND VM 10 % VM VM 10 % tW VCC G VI VO DUT RT CL 001aah768 Test data is given in Table 9. Definitions test circuit: RT = termination resistance should be equal to output impedance Zo of the pulse generator. CL = load capacitance including jig and probe capacitance. Fig 7. Table 9. Load circuitry for measuring switching times Test data Type Input Load Test VI tr, tf CL 74HC00 VCC 6.0 ns 15 pF, 50 pF tPLH, tPHL 74HCT00 3.0 V 6.0 ns 15 pF, 50 pF tPLH, tPHL 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 7 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 12. Package outline DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 ME seating plane D A2 A A1 L c e Z w M b1 (e 1) b MH 8 14 pin 1 index E 1 7 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.2 inches 0.17 0.02 0.13 0.068 0.044 0.021 0.015 0.014 0.009 0.77 0.73 0.26 0.24 0.1 0.3 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT27-1 050G04 MO-001 SC-501-14 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Fig 8. Package outline SOT27-1 (DIP14) 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 8 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.010 0.057 inches 0.069 0.004 0.049 0.05 0.244 0.039 0.041 0.228 0.016 0.028 0.024 0.01 0.01 0.028 0.004 0.012 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 9. Package outline SOT108-1 (SO14) 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 9 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm D SOT337-1 E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp L 7 1 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 2 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 6.4 6.0 5.4 5.2 0.65 7.9 7.6 1.25 1.03 0.63 0.9 0.7 0.2 0.13 0.1 1.4 0.9 8 o 0 o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT337-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 MO-150 Fig 10. Package outline SOT337-1 (SSOP14) 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 10 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 E D A X c y HE v M A Z 8 14 Q (A 3) A2 A A1 pin 1 index θ Lp L 1 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) θ mm 1.1 0.15 0.05 0.95 0.80 0.25 0.30 0.19 0.2 0.1 5.1 4.9 4.5 4.3 0.65 6.6 6.2 1 0.75 0.50 0.4 0.3 0.2 0.13 0.1 0.72 0.38 8 o 0 o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT402-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 MO-153 Fig 11. Package outline SOT402-1 (TSSOP14) 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 11 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; SOT762-1 14 terminals; body 2.5 x 3 x 0.85 mm A B D A A1 E c detail X terminal 1 index area terminal 1 index area C e1 e 2 6 y y1 C v M C A B w M C b L 1 7 14 8 Eh e 13 9 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D (1) Dh E (1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 3.1 2.9 1.65 1.35 2.6 2.4 1.15 0.85 0.5 2 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT762-1 --- MO-241 --- EUROPEAN PROJECTION ISSUE DATE 02-10-17 03-01-27 Fig 12. Package outline SOT762-1 (DHVQFN14) 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 12 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 13. Abbreviations Table 10. Abbreviations Acronym Description CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model LSTTL Low-power Schottky Transistor-Transistor Logic MM Machine Model TTL Transistor-Transistor Logic 14. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes 74HC_HCT00_4 20100111 Product data sheet - 74HC_HCT00_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 74HC_HCT00_3 20030630 Product data sheet - 74HC_HCT00_CNV_2 74HC_HCT00_CNV_2 19970826 Product specification - - 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 13 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 15. Legal information 15.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 15.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74HC_HCT00_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 11 January 2010 14 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 17. Contents 1 2 3 4 5 5.1 5.2 6 7 8 9 10 11 12 13 14 15 15.1 15.2 15.3 15.4 16 17 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 January 2010 Document identifier: 74HC_HCT00_4