DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 QUICK REFERENCE DATA DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Drain-source voltage VDS max. 60 V Gate-source voltage VGS max. 15 V Drain current (DC) ID max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot max. 830 mW Junction temperature Tj max. 150 °C RDS(on) max. Drain-source ON-resistance FEATURES VGS = 10 V; ID = 200 mA • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdown. PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION d handbook, halfpage 1 2 3 g MAM146 s Note: Various pin configurations available. Fig.1 Simplified outline and symbol. April 1995 2 5 Ω Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 60 V Drain-gate voltage VDG max. 60 V Gate-source voltage VGS max. 15 V Drain current (DC) at Tc = 25 °C ID max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot max. 830 mW Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 150 K/W V(BR)DS min. typ. 60 V 90 V VGS(th) min. max. 0.8 V 3.0 V IGSoff max. 10 nA IDSS max. 0.5 µA RDS(on) typ. max. 2.5 Ω 5.0 Ω gfs typ. 200 mS Ciss typ. max. 25 pF 40 pF Cos typ. max. 22 pF 30 pF Crs typ. max. 6 pF 10 pF ID = 200 mA; VDS = 50 V; ton typ. max. 4 ns 10 ns VGS = 0 to 10 V toff typ. max. 4 ns 10 ns −55 to +150 °C THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage VGS = 0; ID = 100 µA Gate threshold voltage VGS = VDS; ID = 1 mA Gate-source leakage current VGS = 15 V; VDS = 0 Drain cut-off current VDS = 25 V; VGS = 0 Drain-source ON-resistance (note 1) VGS = 10 V; ID = 200 mA Forward transconductance (note 1) VDS = 10 V; ID = 200 mA; f = 1 kHz Capacitances at f = 1 MHz VDS = 10 V; VGS = 0 Switching times at ID = 200 mA April 1995 3 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 Note 1. tp = 80 µs; δ = 0,01. VDD = 50 V handbook, halfpage handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 Fig.2 Switching times test circuit. April 1995 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant April 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-04-14 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 NOTES April 1995 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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