PHILIPS BS170

DISCRETE SEMICONDUCTORS
DATA SHEET
BS170
N-channel vertical D-MOS
transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
QUICK REFERENCE DATA
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
Drain-source voltage
VDS
max.
60 V
Gate-source voltage
VGS
max.
15 V
Drain current (DC)
ID
max.
500 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
830 mW
Junction temperature
Tj
max.
150 °C
RDS(on)
max.
Drain-source ON-resistance
FEATURES
VGS = 10 V; ID = 200 mA
• Very low RDS(on).
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching.
• No secondary breakdown.
PINNING - TO-92 VARIANT
1 = source
2 = gate
3 = drain
PIN CONFIGURATION
d
handbook, halfpage
1
2
3
g
MAM146
s
Note: Various pin configurations available.
Fig.1 Simplified outline and symbol.
April 1995
2
5 Ω
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
max.
60 V
Drain-gate voltage
VDG
max.
60 V
Gate-source voltage
VGS
max.
15 V
Drain current (DC) at Tc = 25 °C
ID
max.
500 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
830 mW
Storage temperature range
Tstg
Junction temperature
Tj
max.
150 °C
Rth j-a
=
150 K/W
V(BR)DS
min.
typ.
60 V
90 V
VGS(th)
min.
max.
0.8 V
3.0 V
IGSoff
max.
10 nA
IDSS
max.
0.5 µA
RDS(on)
typ.
max.
2.5 Ω
5.0 Ω
gfs
typ.
200 mS
Ciss
typ.
max.
25 pF
40 pF
Cos
typ.
max.
22 pF
30 pF
Crs
typ.
max.
6 pF
10 pF
ID = 200 mA; VDS = 50 V;
ton
typ.
max.
4 ns
10 ns
VGS = 0 to 10 V
toff
typ.
max.
4 ns
10 ns
−55 to +150 °C
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
VGS = 0; ID = 100 µA
Gate threshold voltage
VGS = VDS; ID = 1 mA
Gate-source leakage current
VGS = 15 V; VDS = 0
Drain cut-off current
VDS = 25 V; VGS = 0
Drain-source ON-resistance (note 1)
VGS = 10 V; ID = 200 mA
Forward transconductance (note 1)
VDS = 10 V; ID = 200 mA; f = 1 kHz
Capacitances at f = 1 MHz
VDS = 10 V; VGS = 0
Switching times at ID = 200 mA
April 1995
3
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
Note
1. tp = 80 µs; δ = 0,01.
VDD = 50 V
handbook, halfpage
handbook, halfpage
90 %
INPUT
10 %
90 %
10 V
0V
ID
OUTPUT
50 Ω
10 %
MSA631
ton
toff
MBB692
Fig.2 Switching times test circuit.
April 1995
Fig.3 Input and output waveforms.
4
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L2
E
d
A
L
b
1
e1
2
e
D
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
max
L2
max
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 variant
April 1995
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
5
EUROPEAN
PROJECTION
ISSUE DATE
97-04-14
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
6
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
NOTES
April 1995
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
137107/1200/01/pp8
Date of release: April 1995
Document order number:
9397 750 02456