DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • No secondary breakdown Drain-source voltage VDS max. 200 V Drain-current (DC) ID max. 250 mA RDS(on) typ. max. 7 Ω 12 Ω VGS(th) max. 2.8 V Drain-source ON-resistance ID = 250 mA; VGS = 10 V Gate threshold voltage PINNING - SOT223 • Direct interface to C-MOS, TTL, etc. • High-speed switching BSP120 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP120 PIN CONFIGURATION d 4 handbook, halfpage g 1 Top view 2 s 3 MAM054 Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP120 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 200 V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) ID max. 250 mA Drain current (peak) IDM max. 800 mA Total power dissipation up to Tamb = 25 °C (note 1) Ptot max. 1.5 W −65 to + 150 °C Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 83.3 K/W THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.5 mm; mounting pad for the drain lead min. 6 cm2. CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 V(BR)DSS min. 200 V IDSS max. 1.0 µA IGSS max. 100 nA RDS(on) typ. max. 7 Ω 12 Ω VGS(th) min. max. 0.8 V 2.8 V Yfs min. typ. 125 mS 250 mS Ciss typ. max. 45 pF 65 pF Coss typ. max. 20 pF 30 pF Drain-source leakage current VDS =160 V; VGS = 0 Gate-source leakage current VGS = 20 V; VDS = 0 Drain-source ON-resistance (see Fig.4) ID = 250 mA; VGS = 10 V Gate threshold voltage ID = 1 mA; VGS = VDS Transfer admittance ID = 250 mA; VDS = 15 V Input capacitance at f = 1 MHz; VDS = 10 V; VGS = 0 Output capacitance at f = 1 MHz; VDS = 10 V; VGS = 0 April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP120 Feedback capacitance at f = 1 MHz; VDS = 10 V; VGS = 0 Crss typ. max. 5 pF 10 pF ton typ. max. 3 ns 6 ns toff typ. max. 15 ns 20 ns Switching times (see Figs 2 and 3) ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 90 % 10 V OUTPUT ID 0V 10 % 50 Ω ton MBB691 toff MBB692 Fig.2 Switching time test circuit. 103 handbook, halfpage Fig.3 Input and output waveforms. MDA738 MDA739 1 handbook, halfpage VGS = 10 V ID (A) 0.8 5V ID (mA) 4V 0.6 102 0.4 0.2 10 0 4 6 8 10 0 12 14 RDSon (Ω) Fig.4 Tj = 25 °C; typical values. April 1995 2 4 6 8 10 VGS (V) Fig.5 Tj = 25 °C; VDS = 10 V; typical values. 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP120 MDA740 1 handbook, halfpage handbook, VGS = 10 V ID (A) 0.8 MBB693 2 Ptot (W) 1.6 5V 1.2 0.6 4V 0.8 0.4 3V 0.2 0.4 0 0 2 0 4 6 8 0 10 VDS (V) Fig.6 Tj = 25 °C; typical values. 150 200 Tamb (°C) MDA742 3 MDA743 1.2 handbook, halfpage k k 2.5 1.1 2 1 1.5 0.9 1 0.8 0 50 100 Tj (°C) 0.7 −50 150 Fig.8 April 1995 100 Fig.7 Power derating curve. handbook, halfpage 0.5 −50 50 0 50 100 Tj (°C) Fig.9 R DSon at T j k = ----------------------------------------- ; R DSon at 25 °C V GS ( th ) at T j k = --------------------------------------------- ; V GS ( th ) at 25 °C at 250 mA/10 V; typical values. VGS(th) at 1 mA; typical values. 5 150 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MDA744 120 handbook, halfpage C (pF) 80 Ciss 40 Coss Crss 0 0 10 20 VDS (V) 30 Fig.10 Tj = 25 °C; VGS = 0; f = 1 MHz; typical values. April 1995 6 BSP120 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP120 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 April 1995 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP120 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 8 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 9 BSP120 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 10 BSP120 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 11 BSP120 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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