MC74HC03A Quad 2-Input NAND Gate with Open-Drain Outputs High−Performance Silicon−Gate CMOS The MC74HC03A is identical in pinout to the LS03. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC03A NAND gate has, as its outputs, a high−performance MOS N−Channel transistor. This NAND gate can, therefore, with a suitable pullup resistor, be used in wired−AND applications. Having the output characteristic curves given in this data sheet, this device can be used as an LED driver or in any other application that only requires a sinking current. http://onsemi.com MARKING DIAGRAMS 14 PDIP−14 N SUFFIX CASE 646 14 1 1 Features • Output Drive Capability: 10 LSTTL Loads With Suitable Pullup • • • • • • • Resistor Outputs Directly Interface to CMOS, NMOS and TTL High Noise Immunity Characteristic of CMOS Devices Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1 mA In Compliance With the JEDEC Standard No. 7 A Requirements Chip Complexity: 28 FETs or 7 Equivalent Gates These Devices are Pb−Free, Halogen Free and are RoHS Compliant 14 SOIC−14 D SUFFIX CASE 751A 14 1 14 14 1 1 14 SOEIAJ−14 F SUFFIX CASE 965 14 B HC 03A ALYWG G TSSOP−14 DT SUFFIX CASE 948G VCC A HC03AG AWLYWW 1 LOGIC DIAGRAM PIN 14 = VCC PIN 7 = GND * Denotes open-drain outputs MC74HC03AN AWLYYWWG OUTPUT PROTECTION DIODE 1 3,6,8,11 74HC03A ALYWG 1 Y* A L, WL Y, YY W, WW G or G 1,4,9,12 2,5,10,13 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) FUNCTION TABLE Pinout: 14−Lead Packages (Top View) VCC 14 B4 13 A4 12 Y4 11 B3 10 A3 9 Inputs Y3 8 1 2 3 4 5 6 7 A1 B1 Y1 A2 B2 Y2 GND Output A B Y L L H H L H L H Z Z Z L Z = High Impedance ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 11 1 Publication Order Number: MC74HC03A/D MC74HC03A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit – 0.5 to + 7.0 V VCC DC Supply Voltage (Referenced to GND) Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air 750 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds Plastic DIP, SOIC or TSSOP Package Plastic DIP† SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. _C 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min Max Unit 2.0 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V DESIGN GUIDE Value Unit Internal Gate Count* Criteria 7.0 ea Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 mW 0.0075 pJ Speed Power Product *Equivalent to a two−input NAND gate ORDERING INFORMATION Package Shipping† MC74HC03ANG PDIP−14 (Pb−Free) 25 Units/Rail MC74HC03ADG SOIC−14 (Pb−Free) 55 Units/Rail MC74HC03ADR2G SOIC−14 (Pb−Free) 2500/Tape & Reel MC74HC03ADTR2G TSSOP−14* 2500/Tape & Reel MC74HC03AFELG SOEIAJ−14 (Pb−Free) 2000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 MC74HC03A DC CHARACTERISTICS (Voltages Referenced to GND) Condition VCC V Guaranteed Limit Symbol Parameter −55 to 25°C ≤85°C ≤125°C Unit VIH Minimum High−Level Input Voltage Vout = 0.1V or VCC −0.1V |Iout| ≤ 20mA 2.0 3.0 4.5 6.0 1.50 2.10 3.15 4.20 1.50 2.10 3.15 4.20 1.50 2.10 3.15 4.20 V VIL Maximum Low−Level Input Voltage Vout = 0.1V or VCC − 0.1V |Iout| ≤ 20mA 2.0 3.0 4.5 6.0 0.50 0.90 1.35 1.80 0.50 0.90 1.35 1.80 0.50 0.90 1.35 1.80 V VOL Maximum Low−Level Output Voltage Vout = 0.1V or VCC − 0.1V |Iout| ≤ 20mA 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V Vin = VIH or VIL 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0mA 6.0 1.0 10 40 mA IOZ Maximum Three−State Leakage Current Output in High−Impedance State Vin = VIL or VIH Vout = VCC or GND 6.0 ±0.5 ±5.0 ±10 mA AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns) Symbol Parameter Guaranteed Limit VCC V −55 to 25°C ≤85°C ≤125°C Unit tPLZ, tPZL Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) 2.0 3.0 4.5 6.0 120 45 24 20 150 60 30 26 180 75 36 31 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 2) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns Cin Maximum Input Capacitance 10 10 10 pF Cout Maximum Three−State Output Capacitance (Output in High−Impedance State) 10 10 10 pF Typical @ 25°C, VCC = 5.0 V, VEE = 0 V CPD 8.0 Power Dissipation Capacitance (Per Buffer)* * Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . http://onsemi.com 3 pF MC74HC03A VCC tf tr INPUT A Rpd OUTPUT DEVICE UNDER TEST GND tPZL tPLZ HIGH IMPEDANCE 90% 50% 10% OUTPUT Y 1kW VCC 90% 50% 10% 10% TEST POINT CL* VOL tTHL *Includes all probe and jig capacitance Figure 1. Switching Waveforms Figure 2. Test Circuit 25 VCC=5V TYPICAL T=25°C I D, SINK CURRENT (mA) 20 T=25°C 15 T=85°C 10 T=125°C EXPECTED MINIMUM* 5 0 0 1 2 3 4 VO, OUTPUT VOLTAGE (VOLTS) 5 *The expected minimum curves are not guarantees, but are design aids. Figure 3. Open−Drain Output Characteristics VCC + VR + VF - VCC PULLUP RESISTOR A1 B1 A2 B2 An Bn 1/4 HC03 Y1 1/4 HC03 OUTPUT LED1 1/4 HC03 1/4 HC03 DESIGN EXAMPLE CONDITIONS: ID^10mA TYPICAL CURVE, at ID=10mA, VDS^0.4V Y2 LED2 LED ENABLE 1/4 HC03 VCC V * VF * VO NR + CC ID Yn + 5V * 1.7V * 0.4V 10mA OUTPUT = Y1 • Y2 • . . . • Yn = A1B1 • A2B2 • . . . • AnBn + 290W USE R = 270W Figure 4. Wired AND Figure 5. LED Driver With Blanking http://onsemi.com 4 MC74HC03A PACKAGE DIMENSIONS PDIP−14 N SUFFIX CASE 646−06 ISSUE P 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C −T− SEATING PLANE H G D 14 PL J K 0.13 (0.005) M M http://onsemi.com 5 DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10 _ 0.38 1.01 MC74HC03A PACKAGE DIMENSIONS SOIC−14 D SUFFIX CASE 751A−03 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) B M 7 1 G −T− D 14 PL 0.25 (0.010) T B S A DIM A B C D F G J K M P R J M K M F R X 45 _ C SEATING PLANE M S SOLDERING FOOTPRINT 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS http://onsemi.com 6 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 MC74HC03A PACKAGE DIMENSIONS TSSOP−14 DT SUFFIX CASE 948G−01 ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ SOLDERING FOOTPRINT 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS http://onsemi.com 7 INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74HC03A PACKAGE DIMENSIONS SOEIAJ−14 F SUFFIX CASE 965−01 ISSUE B 14 LE 8 Q1 E HE M_ L 7 1 DETAIL P Z D VIEW P A e DIM A A1 b c D E e HE L LE M Q1 Z A1 b 0.13 (0.005) c M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). 0.10 (0.004) MILLIMETERS MIN MAX --2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 --1.42 INCHES MIN MAX --0.081 0.002 0.008 0.014 0.020 0.004 0.008 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 --0.056 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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