Bulletin PD-20517 rev. H 07/04 15MQ040N SCHOTTKY RECTIFIER 3 Amp IF(AV) = 3 Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics IF DC 15MQ040N Units 3 A VRRM 40 V IFSM @ tp = 5 µs sine 330 A VF @ 2Apk, TJ=125°C 0.43 V TJ range - 40 to 150 °C The 15MQ040N Schottky rectifier is designed to be used for low-power applications where a reverse voltage of 40 volts is ancountered and surface mountable is required. Applications Switching power supplies Meter protection Reverse protection for power input to PC board circuits Battery isolation and charging Low threshold voltage diode Free-wheeling or by-pass diode Low voltage clamp Features Surface mountable Extremely low forward voltage Improved reverse blocking voltage capability relative to other similar size Schottky Compact size Case Styles 15MQ040N SMA www.irf.com 1 15MQ040N Bulletin PD-20517 rev. H 07/04 Voltage Ratings Part number VR 15MQ040N Max. DC Reverse Voltage (V) 40 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 15MQ Units IF(AV) Max. Average Forward Current * See Fig. 4 IFSM 2.1 Max. Peak One Cycle Non-Repetitive 330 Surge Current * See Fig. 6 140 A A EAS Non-Repetitive Avalanche Energy 6.0 mJ IAR Repetitive Avalanche Current 1.0 A 15MQ Units Conditions 50% duty cycle @ TL = 105 °C, rectangular wave form. On PC board 9mm2 island(.013mm thick copper pad area) 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 1A, L = 12mH Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) 0.42 V @ 1A 0.49 V @ 2A 0.34 V @ 1A 0.43 V @ 2A Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C * See Fig. 2 20 mA TJ = 125 °C TJ = TJ max. * See Fig. 1 IRM Conditions VF(TO) Threshold Voltage 0.26 V rt Forward Slope Resistance 64.6 mΩ CT Typical Junction Capacitance 134 pF LS Typical Series Inductance 2.0 nH 10000 V/µs dv/dt Max. Voltage Rate of Change TJ = 25 °C TJ = 125 °C VR = rated VR VR = 10VDC, TJ = 25°C, test signal = 1Mhz Measured lead to lead 5mm from package body (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 15MQ TJ Max. Junction Temperature Range (*) -40 to 150 Tstg Max. Storage Temperature Range RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight 80 SMA Device Marking IR3F dTj < 1 Rth( j-a) Conditions °C °C °C/W DC operation 0.07(0.002) g (oz.) Case Style (*) dPtot 2 -40 to 150 Units Similar D-64 thermal runaway condition for a diode on its own heatsink www.irf.com 15MQ040N Bulletin PD-20517 rev. H 07/04 100 TJ = 150°C 10 1 125°C 100°C 1 75°C 0.1 50°C 0.01 0.001 25°C 0 5 10 15 20 25 30 35 TJ= 150°C Reverse Voltage - V R (V) TJ= 125°C Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 40 TJ= 25°C 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Junc tion Capac itanc e - C T (pF) Instantaneous Forward Current - I F (A) Reverse Current - I R (mA) 10 TJ = 25°C 100 10 0 5 10 15 20 25 30 35 40 45 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 15MQ040N Bulletin PD-20517 rev. H 07/04 1.6 140 120 110 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 90 80 70 60 50 Square wave (D = 0.50) 80% Rated V R applied 40 see note (2) 30 0 0.5 1 1.5 2 2.5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.4 DC 130 Average Power Loss - (Watts) Allowable Case Temperature - (°C) 150 1.2 1 RMSLimit 0.8 DC 0.6 0.4 0.2 0 3 0 Average Forward Current - I F(AV) (A) 0.5 1 1.5 2 2.5 3 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Non-Repetitive Surge Current - I FSM (A) 1000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 15MQ040N Bulletin PD-20517 rev. H 07/04 Outline Table CATHODE Device Marking: IR3F 1.40 (.055) 1.60 (.062) AN OD E 1 2.50 (.098) 2.90 (.114) 2 1 P O LA R I TY 4.00 (.157) 2 PA R T N U M B ER 4.60 (.181) .152 (.006) .305 (.012) 1.47 MIN. (.058 MIN.) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 2.10 MAX. (.085 MAX. ) 1.27 MIN. (.050 MIN.) 5.53 (.218) SOLDERING PAD Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR3F VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 15MQ040N Bulletin PD-20517 rev. H 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 15 M Q 040 N TR - 1 2 3 4 5 6 7 1 - Current Rating 2 - M = SMA 3 - Q = Schottky Q Series 4 - Voltage Rating (040 = 40V) 5 - N = New SMA 6 - y none = Box (1000 pieces) y TR = Tape & Reel (7500 pieces) 7 y none = Standard Production y PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 6 www.irf.com