Bulletin PD-20518 rev. N 07/04 10MQ040N SCHOTTKY RECTIFIER 2.1 Amp IF(AV) = 2.1Amp VR = 40V Major Ratings and Characteristics Characteristics Description/ Features The 10MQ040N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Value Units 2.1 A VRRM 40 V IFSM @ tp = 5 µs sine 120 A High frequency operation VF @ 1.5Apk, TJ=125°C 0.56 V Guard ring for enhanced ruggedness and long term reliability TJ range - 55 to 150 °C IF DC Small foot print, surface mountable Low forward voltage drop Case Styles 10MQ040N SMA www.irf.com 1 10MQ040N Bulletin PD-20518 rev. N 07/04 Voltage Ratings Part number VR 10MQ040N Max. DC Reverse Voltage (V) 40 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 10MQ Units IF(AV) Max. Average Forward Current * See Fig. 4 IFSM 1.5 Max. Peak One Cycle Non-Repetitive 120 A A Conditions 50% duty cycle @ TL = 123 °C, rectangular wave form. On PC board 9mm2 island(.013mm thick copper pad area) Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated VRRM applied 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6 30 EAS Non-Repetitive Avalanche Energy 3.0 mJ IAR Repetitive Avalanche Current 1.0 A 10MQ Units 0.54 V @ 1A 0.62 V @ 1.5A TJ = 25 °C, IAS = 1A, L = 6mH Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) * See Fig. 1 Conditions TJ = 25 °C 0.49 V @ 1A 0.56 V @ 1.5A Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C * See Fig. 2 26 mA TJ = 125 °C VF(TO) Threshold Voltage 0.36 V TJ = TJ max. rt Forward Slope Resistance 104 mΩ CT Typical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body 10000 V/µs IRM dv/dt Max. Voltage Rate of Change TJ = 125 °C VR = rated VR (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 10MQ Units TJ Max. Junction Temperature Range (*) - 55 to 150 °C Tstg Max. Storage Temperature Range °C RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight 80 SMA Device Marking IR1F dTj < 1 Rth( j-a) °C/W DC operation 0.07(0.002) g (oz.) Case Style (*) dPtot 2 - 55 to 150 Conditions Similar D-64 thermal runaway condition for a diode on its own heatsink www.irf.com 10MQ040N Bulletin PD-20518 rev. N 07/04 100 Reverse Current - I R (mA) 10 TJ= 150°C 125°C 1 100°C 0.1 75°C 50°C 0.01 25°C 0.001 Tj = 125˚C 0.0001 Tj = 25˚C 0 5 10 15 20 25 30 35 40 Reverse Voltage - V R (V) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 1 100 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Junction Capacitance - C T (pF) Instantaneous Forward Curent - IF (A) Tj = 150˚C 10 TJ= 25°C 10 0 5 10 15 20 25 30 35 40 Reverse Voltage - V R(V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 10MQ040N 150 1.4 140 1.2 Average Power Loss - (Watts) Allo wable Case Temperature - (°C) Bulletin PD-20518 rev. N 07/04 DC 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 100 90 Square wave (D = 0.50) 80% Rated VR a pplied 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1 RMSLimit 0.8 DC 0.6 0.4 0.2 see note (2) 70 0 0.4 0.8 1.2 1.6 2 0 2.4 0 Average Forward Current - I F(AV) (A) 0.8 1.2 1.6 2 2.4 Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Non-Repetitive Surge Current - I FSM (A) 0.4 Average Forward Current - I F(AV) (A) 100 At Any Rated Load Condition And With Rated V RRM Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = V R1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10MQ040N Bulletin PD-20518 rev. N 07/04 Outline Table CA T HO DE Device Marking: IR1F 1.40 (.055) 1.60 (.062) 1 2.50 (.098) 2.90 (.114) A N OD E 2 1 P OLA R IT Y 4.00 (.157) 2 P ART NU MBE R 4.60 (.181) .152 (.006) .305 (.012) 1.47 MIN. (.058 MIN.) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 2.10 MAX. (.085 MAX. ) 1.27 MIN. (.050 MIN.) 5.53 (.218) SOLDERING PAD Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1F VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10MQ040N Bulletin PD-20518 rev. N 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 M Q 040 N TR - 1 2 3 4 5 6 7 1 - Current Rating 2 - M = SMA 3 - Q = Schottky Q Series 4 - Voltage Rating (040 = 40V) 5 - N = New SMA 6 - y none = Box (1000 pieces) y TR = Tape & Reel (7500 pieces) 7 y none = Standard Production y PbF = Lead-Free 6 www.irf.com 10MQ040N Bulletin PD-20518 rev. N 07/04 10MQ040N ******************************************** * This model has been developed by * * Wizard SPICE MODEL GENERATOR (1999) * * (International Rectifier Corporation) * * Contain Proprietary Information * ******************************************** * SPICE Model Diode is composed by a * * simple diode plus paralled VCG2T * ******************************************** .SUBCKT 10MQ040N ANO CAT D1 ANO 1 DMOD (0.00472) *Define diode model .MODEL DMOD D(IS=1.29526323971343E-04A,N=1.14666404869581,BV=52V, + IBV=0.260404749526768A,RS= 0.00048144,CJO=2.04792476092255E-08, + VJ=1.82174923822158,XTI=2, EG=0.779470593365538) ******************************************** *Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES(R=1,TC1=-43.3354342653501) GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-4.190325E-03/-43.33543)*((V(2,CAT)*1E6)/(I(VX)+1E-6)1))+1)*7.842581E-02*ABS(V(ANO,CAT)))-1)} ******************************************** .ENDS 10MQ040N Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 www.irf.com 7