Product Overview 1N5817: 20 V, 1.0 A Schottky Rectifier For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Features • Extremely Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency Mechanical Characteristics • • • • • • • Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Shipped in plastic bags, 1000 per bag. Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) 1N5817G Pb-free Active Single 20 0.45 1000 1 25 Axial Lead-2 Active Single 20 0.45 1000 1 25 Axial Lead-2 Halide free 1N5817RLG Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type