Product Overview 1N5821: Schottky Barrier Rectifier, 3.0 A, 30 V For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Features • Extremely Low vF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction • • • • • • • Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds Shipped in plastic bags, 5,000 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) 1N5821G Pb-free Active Single 30 0.5 2000 3 80 Axial Lead-2 Active Single 30 0.5 2000 3 80 Axial Lead-2 Halide free 1N5821RLG Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type