Product Overview 80SQ045N: 45 V, 8.0 A Axial Lead Schottky Rectifier For complete documentation, see the data sheet Product Description The Axial Lead Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • • • • High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage High Surge Capacity Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) 80SQ045NG Pb-free Active Single 45 0.55 1000 8 140 Axial Lead-2 Active Single 45 0.55 1000 8 140 Axial Lead-2 Halide free 80SQ045NRLG Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type