Product Overview 2N6338: 25 A, 100 V High Power NPN Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications. Features • High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 150 Vdc (Min) - 2N6341 • High DC Current Gain hFE = 30 - 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max) • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. Part Electrical Specifications Product Compliance Status Polarity Type VCE(sat) Max (V) IC Continuo us (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type 2N6338G Pb-free Active NPN General Purpose 1 25 100 30 120 40 200 TO-2042 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016