Product Overview

Product Overview
2N6338: 25 A, 100 V High Power NPN Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit
applications.
Features
• High Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) 2N6338
VCEO(sus) = 150 Vdc (Min) - 2N6341
• High DC Current Gain
hFE = 30 - 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
• Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ts = 1.0 µs (Max)
tf = 0.25 µs (Max)
• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see
our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office
or representative.
Part Electrical Specifications
Product
Compliance
Status
Polarity
Type
VCE(sat)
Max (V)
IC
Continuo
us (A)
V(BR)CEO
Min (V)
hFE Min
hFE Max
fT Min
(MHz)
PTM Max
(W)
Package
Type
2N6338G
Pb-free
Active
NPN
General
Purpose
1
25
100
30
120
40
200
TO-2042
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016