isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE s c s .i 2N6338 2N6339 VCBO ww Collector-Base Voltage 2N6340 VCEO VEBO w 2N6341 2N6338 UNIT 120 140 160 180 V 100 2N6339 120 2N6340 140 2N6341 150 Collector-Emitter Voltage V Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A PC Collector Power Dissipation @TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 0.875 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6338 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN MAX UNIT 100 2N6339 120 IC= 50mA ; IB= 0 V 2N6340 140 2N6341 150 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A; IB= 2.5A 2.5 V Base-Emitter On Voltage IC= 10A ; VCE= 2V 1.8 V VBE(on) ICEO 2N6339 w w w Collector Cutoff Current 2N6340 2N6341 n c . i m e s c s .i 2N6338 VCE= 50V; IB= 0 50 VCE= 60V; IB= 0 50 VCE= 70V; IB= 0 50 VCE= 75V; IB= 0 50 VCB= RatedVCBO; IE= 0 10 μA μA ICBO Collector Cutoff Current ICEX Collector Cutoff Current VCE= RatedVCEO;VBE(off)= 1.5V VCE= RatedVCEO;VBE(off)= 1.5V,TC=150℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V 50 hFE-2 DC Current Gain IC= 10A ; VCE= 2V 30 hFE-3 DC Current Gain IC= 25A ; VCE= 2V 12 Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 10MHz 40 Output Capacitance IE= 0 ; VCB= 10V ;ftest= 0.1MHz 300 pF VCC= 80V; IC= 10A;IB1= 1A, VBE(off)= 6V 0.3 μs 1.0 μs 0.25 μs fT COB 120 MHz Switching Times tr tstg Rise Time Storage Time VCC= 80V; IC= 10A; IB1= -IB2= 1A, tf Fall Time isc Website：www.iscsemi.cn 2