SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6338 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6339 2N6340 Open emitter 140 160 2N6341 180 2N6338 100 2N6339 2N6340 Emitter-base voltage UNIT 120 Open base 2N6341 VEBO VALUE 120 140 V V 150 Open collector 6 V IC Collector current 25 A ICM Collector current-peak 50 A IBC Base current 10 A PD Total power dissipation 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6338 V(SUS)CEO Collector-emitter sustaining voltage MIN TYP. MAX UNI T 100 2N6339 120 IC=50mA ;IB=0 V 2N6340 140 2N6341 150 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1.0A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=2.5A 1.8 V VBE sat-1 Base-emitter saturation voltage IC=10A; IB=1.0A 1.8 V VBE sat-2 Base-emitter saturation voltage IC=25A; IB=2.5A 2.5 V VBE Base-emitter on voltage IC=10A ; VCE=2V 1.8 V ICEX Collector cut-off current VCE=Rated VCEO; VEB=1.5V TC=150 10 1.0 µA mA ICBO Collector cut-off current VCB=Rated VCB; IE=0 10 µA 50 µA 100 µA ICEO Collector cut-off current 2N6338 VCE= 50V,IB=0 2N6339 VCE= 60V,IB=0 2N6340 VCE= 70V,IB=0 2N6341 VCE= 75V,IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=2V 50 hFE-2 DC current gain IC=10A ; VCE=2V 30 hFE-3 DC current gain IC=25A ; VCE=2V 12 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz fT Transition frequency IC=1A ; VCE=10V;f=10MHz tr Rise time VCC=80V,IC=10A,IB1=1A ;VBE=1.5V ts Storage time 120 300 40 pF MHz 0.3 µs 1.0 µs 0.25 µs VCC=80V,IC=10A,IB1=IB2=1A tf Fall times 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 PACKAGE OUTLINE Fig.2 outline dimensions 3