SAVANTIC 2N6338

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6338 2N6339 2N6340 2N6341
DESCRIPTION
·With TO-3 package
·Fast switching times
·Low collector saturation voltage
·Complement to type 2N6436~38
APPLICATIONS
·For use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
F
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N6338
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6339
2N6340
Open emitter
140
160
2N6341
180
2N6338
100
2N6339
2N6340
Emitter-base voltage
UNIT
120
Open base
2N6341
VEBO
VALUE
120
140
V
V
150
Open collector
6
V
IC
Collector current
25
A
ICM
Collector current-peak
50
A
IBC
Base current
10
A
PD
Total power dissipation
200
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6338 2N6339 2N6340 2N6341
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6338
V(SUS)CEO
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNI
T
100
2N6339
120
IC=50mA ;IB=0
V
2N6340
140
2N6341
150
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=1.0A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=25A; IB=2.5A
1.8
V
VBE sat-1
Base-emitter saturation voltage
IC=10A; IB=1.0A
1.8
V
VBE sat-2
Base-emitter saturation voltage
IC=25A; IB=2.5A
2.5
V
VBE
Base-emitter on voltage
IC=10A ; VCE=2V
1.8
V
ICEX
Collector cut-off current
VCE=Rated VCEO; VEB=1.5V
TC=150
10
1.0
µA
mA
ICBO
Collector cut-off current
VCB=Rated VCB; IE=0
10
µA
50
µA
100
µA
ICEO
Collector
cut-off current
2N6338
VCE= 50V,IB=0
2N6339
VCE= 60V,IB=0
2N6340
VCE= 70V,IB=0
2N6341
VCE= 75V,IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
50
hFE-2
DC current gain
IC=10A ; VCE=2V
30
hFE-3
DC current gain
IC=25A ; VCE=2V
12
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
fT
Transition frequency
IC=1A ; VCE=10V;f=10MHz
tr
Rise time
VCC=80V,IC=10A,IB1=1A ;VBE=1.5V
ts
Storage time
120
300
40
pF
MHz
0.3
µs
1.0
µs
0.25
µs
VCC=80V,IC=10A,IB1=IB2=1A
tf
Fall times
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6338 2N6339 2N6340 2N6341
PACKAGE OUTLINE
Fig.2 outline dimensions
3