FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 14-Jan-2010 SUBJECT: ON Semiconductor Final Product/Process Change Notification #16382 TITLE: 2N7002L Product types with Trench Die PROPOSED FIRST SHIP DATE: 14-Apr-2010 AFFECTED CHANGE CATEGORY(S): Wafer Process going from a Planar to a Trench Design AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Jennie Shen <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Brian Goodburn < [email protected] > ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 90 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: ON Semiconductor is sending out this notification to announce that a Die technology change is occurring for the 2N7002L product types. Currently, the 2N7002L is built with a Planar design. With this change, we will replace the existing Die with our Trench Die design. The 2N7002L with the Trench Die will have comparable performance to the current 2N7002L in all aspects: electrical, switching, and dynamic characteristics. The Trench Die will be primarily sourced from ON Semiconductors Wafer Fab in Aizu, Japan, but is also 2nd sourced from a Wafer Foundry in Korea. This particular Trench MOSFET platform has been qualified since 2007. Issue Date: 14-Jan-2010 Rev.14 Jun 2007 Page 1 of 4 Final Product/Process Change Notification #16382 RELIABILITY DATA SUMMARY: Aizu Trench 1 Platform Qualification Reliability Test Results: 2N7002E Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vgs= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: Temperature Cycling (TC-PC) Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 1000-cy, 1-Lot Results: 0/80 Wafer Foundry Trench 1 Platform Qualification Reliability Test Results: 2N7002E Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots Results: 0/231 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vgs= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots Results: 0/231 Wafer Foundry Trench 1 Platform Qualification Reliability Test Results: NTMS4107N Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots Results: 0/231 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vgs= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots Results: 0/231 Test: Intermittent Operating Life (IOL-PC) Conditions: Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 3-Lots Results: 0/231 Test: Temperature Cycling (TC-PC) Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 1000-cy, 3-Lots Results: 0/231 Test: Autoclave Test (AC-PC) Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 168-Hrs, 3-Lots Results: 0/231 Test: High Humdity, High Temperature Reverse Bias (HTRB) Conditions: Ta=85'C, Vds= 80% BVdss Rating, Rel Humidity=85%, Duration : 1008-Hrs, 3-Lots Results: 0/231 Issue Date: 14-Jan-2010 Rev.14 Jun 2007 Page 2 of 4 Final Product/Process Change Notification #16382 ELECTRICAL CHARACTERISTIC SUMMARY: 2N7002 (Trench Version) -55 º C IGSS Vgs= 20V 8.50E-12 1.71E-10 Mean 6.86E-11 Std Dev 4.25E-11 Min Max IGSS Vgs= -20V IDSS Vds= 60V IDSS Vds= 60V 6.40E-12 0.00 0.00 2.21E-10 5.71E-10 9.98E-10 7.21E-11 1.58E-10 4.09E-10 4.727E-11 1.6791E-10 4.1E-10 BVDSS VTH VTH RDS(ON) RDS(ON) VSD 250uA 250uA 250uA Id= 50mA Id= 240mA Vgs= 4.5V Vgs= 10V Is=200mA 61.8 64.2 63.8 0.51 1.795 2.020 1.842 0.043 1.795 2.020 1.842 0.043 VTH VTH RDS(ON) RDS(ON) VSD 250uA 250uA Id= 50mA Id= 240mA Vgs= 4.5V Vgs= 10V Is=200mA 0.449 0.487 0.468 0.010 0.347 0.385 0.371 0.011 0.885 0.897 0.890 0.003 25 º C IGSS 2N7002L Spec Limits Cpk IDSS IDSS BVDSS Vgs= 20V Vgs= -20V Vds= 60V Vds= 60V 250uA 1.00E-07 1.00E-07 1.00E-06 1.00E-06 60 1 2.5 7.5 7.5 1.5 528 292 1260 1056 5.1 4.8 8.1 114 117 115 67.67 70.27 69.78 0.64 1.51 1.71 1.56 0.04 1.51 1.71 1.56 0.04 0.70 0.78 0.75 0.02 0.57 0.63 0.61 0.02 0.77 0.78 0.78 0.00 RDON RDON 1.60E-12 2.13E-10 Mean 7.47E-11 Std Dev 6.31E-11 Min Max IGSS 3.00E-13 0.00 0.00 4.65E-10 1.16E-09 9.87E-10 1.19E-10 2.40E-10 2.83E-10 1.139E-10 2.6456E-10 3.15E-10 150 º C IDSS IDSS BVDSS VTH VTH Vgs= 20V IGSS Vgs= -20V Vds= 60V Vds= 60V 250uA 250uA 250uA 1.90E-12 1.44E-10 Mean 4.26E-11 Std Dev 3.67E-11 3.90E-12 2.43E-10 1.01E-10 7.26E-11 8.59E-07 1.69E-06 1.27E-06 2.0773E-07 8.70E-07 1.70E-06 1.27E-06 2.07E-07 74.950 79.150 78.170 1.197 0.950 1.135 1.003 0.035 0.950 1.135 1.003 0.035 Ciss Coss Crss Vds= 25V Vds= 25V Vds= 25V 50 33 25.0 28.3 27.5 0.23 25 137 4.4 4.5 4.4 0.05 5 7.0 3.1 3.4 3.2 0.09 Tr Td(off) Min Max IGSS 2N7002 (Trench Version) Capacitance 2N7002L Spec Limits Cpk Min Max Mean Std Dev Id= 50mA Id= 240mA Vgs= 4.5V Vgs= 10V 1.316 1.458 1.404 0.0396 1.090 1.236 1.186 0.0402 VDSON Is=200mA 0.582 0.591 0.585 0.0021 Gate Charge QT QGS Vdd= 10V Id= 200mA QGD Vgs= 5V No Spec 0.90 0.90 0.90 0.00 0.30 0.30 0.30 0.00 0.10 0.20 0.17 0.05 Resistive Switching Td(on) Tf Vgs= 10V Id= 200mA Vds= 30V RG= 10 Ohms 2N7002L Spec Limits Cpk Min Max Mean Std Dev 30 67 3.0 3.4 3.1 0.13 5.6 5.6 5.6 0.0 40 44 11.6 12.2 11.9 0.21 2.8 3.2 3.0 0.1 CHANGED PART IDENTIFICATION: Products will have a Date Code of the Work Week 11, 2010 or newer. Issue Date: 14-Jan-2010 Rev.14 Jun 2007 Page 3 of 4 Final Product/Process Change Notification #16382 AFFECTED DEVICE LIST 2N7002LT1G 2N7002LT1H 2N7002LT1 2N7002LT3G 2N7002LT3H 2N7002LT3 Issue Date: 14-Jan-2010 Rev.14 Jun 2007 Page 4 of 4