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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
Generic Copy
14-Jan-2010
SUBJECT: ON Semiconductor Final Product/Process Change Notification #16382
TITLE: 2N7002L Product types with Trench Die
PROPOSED FIRST SHIP DATE: 14-Apr-2010
AFFECTED CHANGE CATEGORY(S): Wafer Process going from a Planar to a Trench
Design
AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or Jennie Shen <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office or Brian Goodburn
< [email protected] >
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers. FPCNs are issued at least 90 days prior to
implementation of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance
are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON
Semiconductor Sales Office.
DESCRIPTION AND PURPOSE:
ON Semiconductor is sending out this notification to announce that a Die technology change is
occurring for the 2N7002L product types. Currently, the 2N7002L is built with a Planar design.
With this change, we will replace the existing Die with our Trench Die design.
The 2N7002L with the Trench Die will have comparable performance to the current 2N7002L in all
aspects: electrical, switching, and dynamic characteristics.
The Trench Die will be primarily sourced from ON Semiconductors Wafer Fab in Aizu, Japan, but is
also 2nd sourced from a Wafer Foundry in Korea. This particular Trench MOSFET platform has
been qualified since 2007.
Issue Date: 14-Jan-2010
Rev.14 Jun 2007
Page 1 of 4
Final Product/Process Change Notification #16382
RELIABILITY DATA SUMMARY:
Aizu Trench 1 Platform Qualification
Reliability Test Results: 2N7002E
Test: High Temperature Reverse Bias (HTRB)
Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Gate Bias (HTGB)
Conditions: Ta=150'C, Vgs= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: Temperature Cycling (TC-PC)
Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 1000-cy, 1-Lot
Results: 0/80
Wafer Foundry Trench 1 Platform Qualification
Reliability Test Results: 2N7002E
Test: High Temperature Reverse Bias (HTRB)
Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/231
Test: High Temperature Gate Bias (HTGB)
Conditions: Ta=150'C, Vgs= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/231
Wafer Foundry Trench 1 Platform Qualification
Reliability Test Results: NTMS4107N
Test: High Temperature Reverse Bias (HTRB)
Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/231
Test: High Temperature Gate Bias (HTGB)
Conditions: Ta=150'C, Vgs= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/231
Test: Intermittent Operating Life (IOL-PC)
Conditions: Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 3-Lots
Results: 0/231
Test: Temperature Cycling (TC-PC)
Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 1000-cy, 3-Lots
Results: 0/231
Test: Autoclave Test (AC-PC)
Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 168-Hrs, 3-Lots
Results: 0/231
Test: High Humdity, High Temperature Reverse Bias (HTRB)
Conditions: Ta=85'C, Vds= 80% BVdss Rating, Rel Humidity=85%, Duration : 1008-Hrs, 3-Lots
Results: 0/231
Issue Date: 14-Jan-2010
Rev.14 Jun 2007
Page 2 of 4
Final Product/Process Change Notification #16382
ELECTRICAL CHARACTERISTIC SUMMARY:
2N7002 (Trench Version)
-55 º C
IGSS
Vgs= 20V
8.50E-12
1.71E-10
Mean 6.86E-11
Std Dev 4.25E-11
Min
Max
IGSS
Vgs= -20V
IDSS
Vds= 60V
IDSS
Vds= 60V
6.40E-12
0.00
0.00
2.21E-10
5.71E-10 9.98E-10
7.21E-11
1.58E-10 4.09E-10
4.727E-11 1.6791E-10 4.1E-10
BVDSS
VTH
VTH
RDS(ON) RDS(ON)
VSD
250uA
250uA
250uA
Id= 50mA Id= 240mA
Vgs= 4.5V Vgs= 10V
Is=200mA
61.8
64.2
63.8
0.51
1.795
2.020
1.842
0.043
1.795
2.020
1.842
0.043
VTH
VTH
RDS(ON) RDS(ON)
VSD
250uA
250uA
Id= 50mA Id= 240mA
Vgs= 4.5V Vgs= 10V
Is=200mA
0.449
0.487
0.468
0.010
0.347
0.385
0.371
0.011
0.885
0.897
0.890
0.003
25 º C
IGSS
2N7002L Spec Limits
Cpk
IDSS
IDSS
BVDSS
Vgs= 20V
Vgs= -20V
Vds= 60V
Vds= 60V
250uA
1.00E-07
1.00E-07
1.00E-06
1.00E-06
60
1
2.5
7.5
7.5
1.5
528
292
1260
1056
5.1
4.8
8.1
114
117
115
67.67
70.27
69.78
0.64
1.51
1.71
1.56
0.04
1.51
1.71
1.56
0.04
0.70
0.78
0.75
0.02
0.57
0.63
0.61
0.02
0.77
0.78
0.78
0.00
RDON
RDON
1.60E-12
2.13E-10
Mean 7.47E-11
Std Dev 6.31E-11
Min
Max
IGSS
3.00E-13
0.00
0.00
4.65E-10
1.16E-09 9.87E-10
1.19E-10
2.40E-10 2.83E-10
1.139E-10 2.6456E-10 3.15E-10
150 º C
IDSS
IDSS
BVDSS
VTH
VTH
Vgs= 20V
IGSS
Vgs= -20V
Vds= 60V
Vds= 60V
250uA
250uA
250uA
1.90E-12
1.44E-10
Mean 4.26E-11
Std Dev 3.67E-11
3.90E-12
2.43E-10
1.01E-10
7.26E-11
8.59E-07
1.69E-06
1.27E-06
2.0773E-07
8.70E-07
1.70E-06
1.27E-06
2.07E-07
74.950
79.150
78.170
1.197
0.950
1.135
1.003
0.035
0.950
1.135
1.003
0.035
Ciss
Coss
Crss
Vds= 25V
Vds= 25V
Vds= 25V
50
33
25.0
28.3
27.5
0.23
25
137
4.4
4.5
4.4
0.05
5
7.0
3.1
3.4
3.2
0.09
Tr
Td(off)
Min
Max
IGSS
2N7002 (Trench Version)
Capacitance
2N7002L Spec Limits
Cpk
Min
Max
Mean
Std Dev
Id= 50mA Id= 240mA
Vgs= 4.5V Vgs= 10V
1.316
1.458
1.404
0.0396
1.090
1.236
1.186
0.0402
VDSON
Is=200mA
0.582
0.591
0.585
0.0021
Gate Charge
QT
QGS
Vdd= 10V Id= 200mA
QGD
Vgs= 5V
No Spec
0.90
0.90
0.90
0.00
0.30
0.30
0.30
0.00
0.10
0.20
0.17
0.05
Resistive Switching
Td(on)
Tf
Vgs= 10V Id= 200mA Vds= 30V RG= 10 Ohms
2N7002L Spec Limits
Cpk
Min
Max
Mean
Std Dev
30
67
3.0
3.4
3.1
0.13
5.6
5.6
5.6
0.0
40
44
11.6
12.2
11.9
0.21
2.8
3.2
3.0
0.1
CHANGED PART IDENTIFICATION:
Products will have a Date Code of the Work Week 11, 2010 or newer.
Issue Date: 14-Jan-2010
Rev.14 Jun 2007
Page 3 of 4
Final Product/Process Change Notification #16382
AFFECTED DEVICE LIST
2N7002LT1G
2N7002LT1H
2N7002LT1
2N7002LT3G
2N7002LT3H
2N7002LT3
Issue Date: 14-Jan-2010
Rev.14 Jun 2007
Page 4 of 4