2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 W @ 10 V, 500 mA 115 mA N−Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc ID ID ±115 ±75 ±800 mAdc Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) IDM 1 2 VGS VGSM ±20 ±40 Vdc Vpk Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD 225 1.8 556 mW mW/°C °C/W 300 2.4 417 mW mW/°C °C/W −55 to +150 °C MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg 1 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 3. FR−5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 702 MG G SOT−23 CASE 318 STYLE 21 1 702 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device 2N7002LT1G 2N7002LT3G 2V7002LT1G 2V7002LT3G Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 6 1 Publication Order Number: 2N7002L/D 2N7002L, 2V7002L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 − − Vdc IDSS − − − − 1.0 500 mAdc Gate−Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF − − 100 nAdc Gate−Body Leakage Current, Reverse (VGS = −20 Vdc) IGSSR − − −100 nAdc VGS(th) 1.0 − 2.5 Vdc On−State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 − − mA Static Drain−Source On−State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) − − − − 3.75 0.375 − − − − − − − − 7.5 13.5 7.5 13.5 gFS 80 − − mS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 5.0 pF td(on) − − 20 ns td(off) − − 40 ns VSD − − −1.5 Vdc IS − − −115 mAdc ISM − − −800 mAdc Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Static Drain−Source On−State Resistance (VGS = 10 V, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C TC = 25°C TC = 125°C Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) rDS(on) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Turn−Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 W, RL = 50 W, Vgen = 10 V) BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N7002L, 2V7002L TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -55°C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain−Source On−Resistance -20 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 2N7002L, 2V7002L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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