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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
Generic Copy
09-OCT-2003
SUBJECT: ON Semiconductor Final Product/Process Change Notification #12908
TITLE: Die Technology Conversion for Small Signal MOSFET Products
EFFECTIVE DATE: 15-Dec-2003
AFFECTED CHANGE CATEGORY: Design Change
AFFECTED PRODUCT DIVISION: MOS Power Products Div
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Representative
or Keith Stapley <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Representative
or Bob Forness <[email protected]>
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact Sales Representative or Bob Forness <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers. FPCNs are issued at least 60 days prior to implementation
of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance
are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON
Semiconductor Sales Office.
DESCRIPTION AND PURPOSE:
This is a final notification announcing ON Semiconductor is changing the die technology used to
source the following list of devices. This is the Final PCN to Initial PCN 12908 issued on
07-May-2003 that outlined this change. The new die technology is sourced from the same wafer
fab that is supplying the current die for these devices, Phenitec Semiconductor Corp. located in
Okayama Japan. The electrical performance now matches closely to the industry standard device
performance for these parts, with no change to the datasheet parameters.
Issue Date: 09 Oct, 2003
Page 1 of 3
Final Product/Process Change Notification #12908
QUALIFICATION PLAN:
High Humidity High Temp Reverse Bias: Testing 85DegC, Relative Humidity= 85%, Vgs=0V,
Vds=80% Vdss rating, Duration= 1008Hrs, 3 Lots, 80pcs/Lot
High Temperature Reverse Bias: Ta=150DegC, Vgs=0V, Vds=80%Vdss rating,
Duration=1008Hrs, 3 Lots, 80pcs/Lot
High Temperature Gate Bias: Ta=150DegC, Vgs= 100%Vgss rating, Vds=0V,
Duration=1008Hrs, 3 Lots, 80pcs/Lot
Intermittent Operating Life: Ton= Toff= 2 minutes, delta Tj= 100DegC,
Duration= 15000Cy, 3Lots,80pcs/Lot
Temperature Cycling: Temperature extremes= +150DegC/-65DegC,
Dwell time= 15 minutes, Duration = 1000Cy, 3 Lots, 80pcs/Lot
RELIABILITY DATA SUMMARY:
Reliability Qualification Testing was performed and completed with no qualification related anomalies
being observed. Three qualification lots were tested from the technology qualification vehicle,
NTD4302. A summary of the test results and status is below:
Test
High Hum-Temp, Rev Bias (H3TRB-PC)
Conditions
Ta=85C, RH=85%, Vds=48V, 1008Hrs
Results
0/240
High Temp Reverse Bias (HTRB)
Ta=150C, Vds=48V, 1008Hrs
0/240
High Temp Gate Bias (HTGB)
Ta=150C, Vgs=20V, 1008Hrs
0/239
Intermittent Op Life (IOL-PC)
2min on/off, Delta Tj=100C, 15000cyc
0/239
Temperature Cycle (TC-PC)
+150C to -65C, 1000cycles
0/240
ELECTRICAL CHARACTERISTIC SUMMARY:
2N7002LT1 Data
Control
Parameter
Test Condition
Mean StDev
Igss (nA)
Vgs=20V
62.10 6.060
Idss (nA)
Vds=60V
25.60 19.800
Bvdss (V)
Id=10uA
87.2
3.49
Vth (V)
Id=250uA
1.94
0.045
Rdson1 (Ohms) Id=500mA, Vgs=10V
1.92
0.046
Rdson2 (Ohms) Id=50mA, Vgs=5V
2.24
0.045
Idon (A)
Vds=2V, Vgs=10V
0.94
0.020
Vsd (V)
Isd=11.5mA
0.67
0.002
Gfs (mhos)
Vds=2V, Id=200mA
0.35
0.009
Qual Lot 1
Mean StDev
8.06
1.970
4.84
2.770
72.8
2.36
2.01
0.020
0.82
0.015
1.10
0.015
1.91
0.038
0.67
0.001
0.41
0.002
Qual Lot 2
Mean StDev
7.66
0.902
10.20 9.390
74.8
0.89
1.97
0.020
0.82
0.009
1.10
0.010
1.91
0.023
0.66
0.001
0.40
0.002
Qual Lot 3
Mean StDev
9.03
1.210
10.10 2.180
72.5
0.65
2.00
0.025
0.78
0.007
1.07
0.009
2.00
0.019
0.66
0.002
0.41
0.002
Issue Date: 09 Oct, 2003
Page 2 of 3
Final Product/Process Change Notification #12908
BSS138LT1
Parameter
Igss (nA)
Idss (nA)
Bvdss (V)
Vth (V)
Rdson1 (Ohms)
Rdson2 (Ohms)
Gfs (mhos)
Test Condition
Vgs=20V
Vds=50V
Id=250uA
Id=1mA
Id=200mA, Vgs=2.75V
Id=200mA, Vgs=5V
Vds=2V, Id=200mA
Control
Mean
3.71
11.10
90.8
0.93
2.32
1.99
0.55
StDev
2.365
5.304
0.96
0.024
0.053
0.050
0.077
Qual Lot 1
Mean StDev
7.03
0.979
5.26
2.670
73.1
0.66
1.05
0.030
1.11
0.015
0.83
0.010
0.54
0.117
Qual Lot 2
Mean StDev
5.39
2.452
3.85
1.171
75.6
0.79
1.13
0.021
1.19
0.011
0.89
0.008
0.52
0.105
Qual Lot 3
Mean StDev
7.28
1.152
9.77
9.063
72.6
1.95
1.09
0.030
1.12
0.009
0.82
0.008
0.52
0.040
Control
Mean
9.48
3.08
89.9
2.30
1.98
0.28
StDev
1.897
1.936
3.57
0.050
0.054
0.016
Qual Lot 1
Mean StDev
5.80
1.730
3.61
3.506
74.2
1.64
2.37
0.031
0.83
0.020
0.22
0.001
Qual Lot 2
Mean StDev
5.82
2.090
7.28
3.596
73.5
3.38
2.40
0.041
0.84
0.021
0.23
0.002
Qual Lot 3
Mean StDev
3.01
1.139
6.82
8.170
70.9
2.16
2.33
0.058
0.78
0.019
0.28
0.003
MMBF170LT1
Parameter
Igss (nA)
Idss (nA)
Bvdss (V)
Vth (V)
Rdson (Ohms)
Idoff (uA)
Test Condition
Vgs=15V
Vds=60V
Id=100uA
Id=1mA
Id=200mA, Vgs=10V
Vds=25V
CHANGED PART IDENTIFICATION:
All Products with Date Code 0350 and after could be affected.
AFFECTED DEVICE LIST (WITHOUT SPECIALS):
PART
2N7002LT1, 2N7002LT3, 2N7008, 2N7008RLRA, 2N7008RLRE,
BS170, BS170RL1, BS170RLRA, BS170RLRM, BS170RLRP,
BS170ZL1, BSS138LT1, BSS138LT3, MMBF170LT1, MMBF170LT3,
SBVS138LT1
Issue Date: 09 Oct, 2003
Page 3 of 3