MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features http://onsemi.com • Pb−Free Packages are Available 500 mA, 60 V RDS(on) = 5 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage Rating VDSS 60 Vdc Drain−Gate Voltage VDGS 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) Drain Current − Continuous − Pulsed N−Channel 3 VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 0.8 Adc Symbol Max Unit 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 PD 225 1.8 mW mW/°C RJA 556 °C/W TJ, Tstg −55 to +150 °C 3 SOT−23 CASE 318 STYLE 21 1 2 1. FR−5 = 1.0 0.75 0.062 in. MARKING DIAGRAM 6Z W 6Z W = Device Code = Work Week PIN ASSIGNMENT 3 Drain Gate 1 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 4 1 Publication Order Number: MMBF170LT1/D MMBF170LT1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 − Vdc IGSS − 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) − 5.0 ID(off) − 0.5 A Ciss − 60 pF td(on) − 10 ns td(off) − 10 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 A) Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) On−State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn−On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 ) Figure 1 Turn−Off Delay Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping† MMBF170LT1 SOT−23 (TO−236) 10,000 Tape & Reel MMBF170LT1G SOT−23 (TO−236) (Pb−Free) 3,000 Tape & Reel MMBF170LT3 SOT−23 (TO−236) 10,000 Tape & Reel MMBF170LT3G SOT−23 (TO−236) (Pb−Free) 3,000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V ton td(on) 125 PULSE GENERATOR 50 Vin 20 dB 50 ATTENUATOR 40 pF TO SAMPLING SCOPE 50 INPUT Vout OUTPUT INVERTED Vout tr td(off) 90% 10% INPUT 50% 50 Vin 1 M 90% 90% 50% 10% PULSE WIDTH (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit Figure 2. Switching Waveform http://onsemi.com 2 toff tf MMBF170LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 0.6 0.4 0.2 10 0 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE (NORMALIZED) 2.2 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −60 −20 +20 +60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 4. Transfer Characteristics 2.4 1.8 25°C 125°C Figure 3. Ohmic Region 2.0 −55 °C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 −60 Figure 5. Temperature versus Static Drain−Source On−Resistance −20 +20 +60 T, TEMPERATURE (°C) +100 Figure 6. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 MMBF170LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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