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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
Generic Copy
01-DEC-2004
SUBJECT: ON Semiconductor Final Product/Process Change Notification #13827
TITLE: SOT-723 Assembly/Test Qualification at Leshan
EFFECTIVE DATE: 01-Feb-2005
AFFECTED CHANGE CATEGORY: ON Semiconductor Assembly/Test Site
AFFECTED PRODUCT DIVISION: Discretes Products
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or Laura Rivers [email protected]
SAMPLES: Contact your local ON Semiconductor Sales Office
or Mark Dewitt <[email protected]>
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact Sales Office or Mark Dewitt <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers. FPCNs are issued at least 60 days prior to implementation
of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance
are provided in writing within 30 days of receipt of this notice. To do so, contact your local
ON Semiconductor Sales Office.
DESCRIPTION AND PURPOSE:
This is the Final PCN to Initial PCN 13699 announcing ON Semiconductor is pleased to qualify
additional Assembly/Test capacity of SOT-723 manufacturing in our factory located in Leshan China.
This notification affects NPN/PNP General Purpose Transistors and Digital Transistors. Our Leshan
factory is both QS9000 certified and AEC qualified and has been producing all the technologies in
SOT-23 for customers worldwide for many years. This expansion will provide additional flexibility
and capacity needed to improve responsiveness and on time delivery to our valuable customers.
There will be no change to the form, fit, and function of the devices. Device parameters will
continue to meet all Data Book specifications, and reliability will continue to meet or exceed
ON Semiconductors standards.
Issue Date: 01 Dec, 2004
Page 1 of 3
Final Product/Process Change Notification #13827
RELIABILITY DATA SUMMARY:
Reliability Test Results: Package = SOT723,
Devices =MMBT2907AM3T5G, BC846BM3T5G
Sample Size
(Lots x Units)
Rej
Ta=121C, P=15 psig, RH = 100% 96 hrs
After PC
5x80
0
H3TRB+PC
Ta=85C, P=15 psig, RH = 85%,
After PC
V =80% rated V
1008 hrs
5x80
0
HTB
Ta = 150 deg C
1008 hrs
5x80
0
HTRB
Ta=150C, V = 80% rated V
1008 hrs
5x80
0
Temp Cycle+PC Ta = -65 to +150 deg C
After PC
1000 cyc
5x80
0
IOL+PC
15000 cyc
5x 80
0
24 hr bake @125deg C + 168 hr 85/85 Readout
+ 3 IR @ 260 deg C + 1x Flux immersion
+ Alcohol + DI rinse + Visual
5x320
0
1x30
0
Test
Conditions
A/clave+PC
MSL1(PC)
Ta=25C, Ton/off = 2 min,
delta Tj = 100degC max
Interval
RSH
Ta=260C, Tdwell = 10 sec
end point
SD
Ta=245C, Tdwell=10sec
1x15
0
SD
Ta=260C, Tdwell = 10 sec
1 x 15
0
ELECTRICAL CHARACTERISTIC SUMMARY:
Electrical characterization has been completed on the designated qualification devices.
These devices are representative of the entire family and will qualify the process.
Datasheet specifications and electrical performance of the devices will remain unchanged.
Characterization summary results:
1) ESD performance passes (HBM>3000V, MM>300V)*
2) Passes full tri-temp electrical characterization of DC performance,
no data sheet changes. No change from previous manufacturing process.
*CDM is not applicable to packages smaller than 8 lead SOIC
A full characterization report is available upon request.
CHANGED PART IDENTIFICATION
Product with a date code of ww46 2004 and higher may be manufactured in Leshan.
Standard part marking can be used to trace product back to assembly site.
Issue Date: 01 Dec, 2004
Page 2 of 3
Final Product/Process Change Notification #13827
AFFECTED DEVICE LIST (WITHOUT SPECIALS):
PART
2SA2029M3T5G
2SC5658M3T5G
BC846BM3T5G
BC856BM3T5G
DTA114EM3T5G
DTA114TM3T5G
DTA114YM3T5G
DTA115EM3T5G
DTA123EM3T5G
DTA123JM3T5G
DTA124EM3T5G
DTA124XM3T5G
DTA143EM3T5G
DTA143TM3T5G
DTA143ZM3T5G
DTA144EM3T5G
DTA144TM3T5G
DTA144WM3T5G
DTC114EM3T5G
DTC114TM3T5G
DTC114YM3T5G
DTC115EM3T5G
DTC123EM3T5G
DTC123JM3T5G
DTC124EM3T5G
DTC124XM3T5G
DTC143EM3T5G
DTC143TM3T5G
DTC143ZM3T5G
DTC144EM3T5G
DTC144TM3T5G
DTC144WM3T5G
Issue Date: 01 Dec, 2004
Page 3 of 3