FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 01-DEC-2004 SUBJECT: ON Semiconductor Final Product/Process Change Notification #13827 TITLE: SOT-723 Assembly/Test Qualification at Leshan EFFECTIVE DATE: 01-Feb-2005 AFFECTED CHANGE CATEGORY: ON Semiconductor Assembly/Test Site AFFECTED PRODUCT DIVISION: Discretes Products ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers [email protected] SAMPLES: Contact your local ON Semiconductor Sales Office or Mark Dewitt <[email protected]> FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Mark Dewitt <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 60 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: This is the Final PCN to Initial PCN 13699 announcing ON Semiconductor is pleased to qualify additional Assembly/Test capacity of SOT-723 manufacturing in our factory located in Leshan China. This notification affects NPN/PNP General Purpose Transistors and Digital Transistors. Our Leshan factory is both QS9000 certified and AEC qualified and has been producing all the technologies in SOT-23 for customers worldwide for many years. This expansion will provide additional flexibility and capacity needed to improve responsiveness and on time delivery to our valuable customers. There will be no change to the form, fit, and function of the devices. Device parameters will continue to meet all Data Book specifications, and reliability will continue to meet or exceed ON Semiconductors standards. Issue Date: 01 Dec, 2004 Page 1 of 3 Final Product/Process Change Notification #13827 RELIABILITY DATA SUMMARY: Reliability Test Results: Package = SOT723, Devices =MMBT2907AM3T5G, BC846BM3T5G Sample Size (Lots x Units) Rej Ta=121C, P=15 psig, RH = 100% 96 hrs After PC 5x80 0 H3TRB+PC Ta=85C, P=15 psig, RH = 85%, After PC V =80% rated V 1008 hrs 5x80 0 HTB Ta = 150 deg C 1008 hrs 5x80 0 HTRB Ta=150C, V = 80% rated V 1008 hrs 5x80 0 Temp Cycle+PC Ta = -65 to +150 deg C After PC 1000 cyc 5x80 0 IOL+PC 15000 cyc 5x 80 0 24 hr bake @125deg C + 168 hr 85/85 Readout + 3 IR @ 260 deg C + 1x Flux immersion + Alcohol + DI rinse + Visual 5x320 0 1x30 0 Test Conditions A/clave+PC MSL1(PC) Ta=25C, Ton/off = 2 min, delta Tj = 100degC max Interval RSH Ta=260C, Tdwell = 10 sec end point SD Ta=245C, Tdwell=10sec 1x15 0 SD Ta=260C, Tdwell = 10 sec 1 x 15 0 ELECTRICAL CHARACTERISTIC SUMMARY: Electrical characterization has been completed on the designated qualification devices. These devices are representative of the entire family and will qualify the process. Datasheet specifications and electrical performance of the devices will remain unchanged. Characterization summary results: 1) ESD performance passes (HBM>3000V, MM>300V)* 2) Passes full tri-temp electrical characterization of DC performance, no data sheet changes. No change from previous manufacturing process. *CDM is not applicable to packages smaller than 8 lead SOIC A full characterization report is available upon request. CHANGED PART IDENTIFICATION Product with a date code of ww46 2004 and higher may be manufactured in Leshan. Standard part marking can be used to trace product back to assembly site. Issue Date: 01 Dec, 2004 Page 2 of 3 Final Product/Process Change Notification #13827 AFFECTED DEVICE LIST (WITHOUT SPECIALS): PART 2SA2029M3T5G 2SC5658M3T5G BC846BM3T5G BC856BM3T5G DTA114EM3T5G DTA114TM3T5G DTA114YM3T5G DTA115EM3T5G DTA123EM3T5G DTA123JM3T5G DTA124EM3T5G DTA124XM3T5G DTA143EM3T5G DTA143TM3T5G DTA143ZM3T5G DTA144EM3T5G DTA144TM3T5G DTA144WM3T5G DTC114EM3T5G DTC114TM3T5G DTC114YM3T5G DTC115EM3T5G DTC123EM3T5G DTC123JM3T5G DTC124EM3T5G DTC124XM3T5G DTC143EM3T5G DTC143TM3T5G DTC143ZM3T5G DTC144EM3T5G DTC144TM3T5G DTC144WM3T5G Issue Date: 01 Dec, 2004 Page 3 of 3