DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−723 package which is designed for low power surface mount applications. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current NPN SILICON DIGITAL TRANSISTORS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SOT−723 CASE 631AA STYLE 1 2 1 MARKING DIAGRAM xx M • • • • • • http://onsemi.com xx = Specific Device Code (See Marking Table on page 2) M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: DTC114EM3/D DTC114EM3T5G Series DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) DTC114EM3T5G 8A 10 10 DTC124EM3T5G 8B 22 22 DTC144EM3T5G 8C 47 47 DTC114YM3T5G 8D 10 47 DTC114TM3T5G 8E 10 ∞ DTC143TM3T5G 8F 4.7 ∞ DTC123EM3T5G 8H 2.2 2.2 DTC143EM3T5G 8J 4.7 4.7 DTC143ZM3T5G* 8K 4.7 47 DTC124XM3T5G* 8L 22 47 DTC123JM3T5G 8M 2.2 47 DTC115EM3T5G 8N 100 100 DTC144WM3T5G* 8P 47 22 DTC144TM3T5G 8T 47 ∞ Package Shipping † SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Available upon request. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Max Unit 260 2.0 mW mW/°C 480 °C/W 600 4.8 mW mW/°C RqJA 205 °C/W TJ, Tstg −55 to +150 °C PD Thermal Resistance, Junction−to−Ambient (Note 1) RqJA Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 × 1.0 inch pad. http://onsemi.com 2 DTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 0.2 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 160 60 100 140 140 350 350 15 30 200 150 140 150 140 350 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EM3T5G (IC = 10 mA, IB = 1 mA) DTC143TM3T5G/DTC114TM3T5G/ DTC143EM3T5G/DTC143ZM3T5G/ DTC124XM3T5G/DTC144TM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) VOL DTC114EM3T5G DTC124EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC144EM3T5G DTC144TM3T5G DTC115EM3T5G DTC144WM3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc Vdc DTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Symbol Min Typ Max Unit VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 61.1 kW 0.8 1.0 1.2 0.17 − 0.8 0.055 0.38 0.038 1.7 0.21 − 1.0 0.1 0.47 0.047 2.1 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 4) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143TM3T5G DTC143ZM3T5G DTC114TM3T5G DTC144TM3T5G Input Resistor DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G Resistor Ratio R1/R2 DTC114EM3T5G/DTC124EM3T5G/ DTC144EM3T5G/DTC115EM3T5G DTC114YM3T5G DTC143TM3T5G/DTC114TM3T5G/DTC144TM3T5G DTC123EM3T5G/DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC144WM3T5G PD , POWER DISSIPATION (MILLIWATTS) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 300 250 200 150 100 50 0 −50 RqJA = 480°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 DTC114EM3T5G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C TA=−25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 DTC114EM3T5G Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EM3T5G IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 VCE = 10 V 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 DTC114EM3T5G Series 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EM3T5G 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 50 DTC114EM3T5G Series 1 300 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 200 −25°C 150 100 50 0 80 TA=75°C VCE = 10 250 1 2 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C −25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 50 10 DTC114EM3T5G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source http://onsemi.com 9 DTC114EM3T5G Series PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C DIM A b b1 C D E e HE L STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. DTC114EM3/D