DISCRETE SEMICONDUCTORS DATA SHEET BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of 2002 Feb 04 2004 Feb 06 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 PINNING FEATURES • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. handbook, halfpage 3 3 MARKING 1 MARKING CODE(1) TYPE NUMBER BC846 1D* BC846A 1A* BC846B 1B* BC847 1H* BC847A 1E* BC847B 1F* BC847C 1G* BC848B 1K* 1 Top view Fig.1 2 2 MAM255 Simplified outline (SOT23) and symbol. Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC846 − DESCRIPTION plastic surface mounted package; 3 leads BC846A BC846B BC847 BC847A BC847B BC847C BC848B 2004 Feb 06 2 VERSION SOT23 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC846 − 80 V BC847 − 50 V BC848 − 30 V BC846 − 65 V BC847 − 45 V BC848 − 30 V BC846; BC847 − 6 V BC848 − 5 V collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. 2004 Feb 06 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − − 15 nA − − 5 µA − − 100 nA BC846A; BC847A − 90 − BC846B; BC847B; BC848B − 150 − − 270 − BC846 110 − 450 BC847 110 − 800 BC846A; BC847A 110 180 220 BC846B; BC847B; BC848B 200 290 450 BC847C 420 520 800 VEB = 5 V; IC = 0 hFE DC current gain IC = 10 µA; VCE = 5 V BC847C DC current gain VBE MAX. VCB = 30 V; IE = 0 emitter-base cut-off current VBEsat TYP. VCB = 30 V; IE = 0; Tj = 150 °C collector-base cut-off current IEBO VCEsat MIN. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage IC = 2 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA; note 1 − 200 600 mV IC = 10 mA; IB = 0.5 mA − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV IC = 2 mA; VCE = 5 V 580 660 700 mV IC = 10 mA; VCE = 5 V − − 770 mV Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 2.5 − pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 2 10 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Feb 06 4 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 MGT723 400 MGT724 1200 BE (mV) 1000 handbook, halfpage handbook, halfpage V hFE (1) 300 (1) 800 (2) (2) 200 600 (3) 400 (3) 100 200 0 10−1 1 10 102 0 10−1 103 1 10 102 I C (mA) BC846A; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC846A; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGT725 103 handbook, halfpage 103 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGT726 1200 VBEsat (mV) 1000 handbook, halfpage VCEsat (mV) (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 10−1 1 10 102 0 10−1 103 I C (mA) 10 102 103 I C (mA) BC846A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC846A; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Feb 06 1 5 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 MGT727 600 MGT728 1200 VBE (mV) 1000 handbook, halfpage handbook, halfpage hFE (1) 500 (1) 400 800 (2) (2) 300 600 200 400 (3) 100 0 10−1 1 10 (3) 200 102 0 10−2 103 10−1 1 10 I C (mA) BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. MGT729 104 handbook, halfpage VCEsat (mV) 1200 VBEsat (mV) 1000 103 800 102 103 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGT730 handbook, halfpage (1) (2) 600 (3) 102 400 (1) 200 (3) (2) 10 10−1 1 10 102 0 10−1 103 BC847B; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847B; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Feb 06 1 10 102 103 I C (mA) I C (mA) 6 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 MGT731 1200 MGT732 1200 VBE (mV) 1000 handbook, halfpage handbook, halfpage hFE 1000 (1) 800 (1) 800 (2) (2) 600 400 600 200 0 10−1 (3) 400 (3) 200 1 10 102 0 10−2 103 10−1 1 10 I C (mA) 102 103 I C (mA) BC847C; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847C; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. MGT733 104 handbook, halfpage VCEsat (mV) 1200 BEsat (mV) 1000 103 800 MGT734 handbook, halfpage V (1) (2) 600 (3) 102 400 (1) 200 (3) (2) 10 10−1 1 10 102 0 10−1 103 I C (mA) 1 10 102 103 I C (mA) BC847C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847C; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Feb 06 7 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Feb 06 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 8 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Feb 06 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp10 Date of release: 2004 Feb 06 Document order number: 9397 750 12395