PHILIPS PEMZ7

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMZ7
NPN/PNP general purpose
transistors
Product specification
Supersedes data of 2001 Sep 25
2001 Nov 07
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
PEMZ7
PINNING
FEATURES
• 300 mW total power dissipation
PIN
• Very small 1.6 × 1.2 mm ultra thin package
1, 4
emitter
TR1; TR2
• Self alignment during soldering due to straight leads
2, 5
base
TR1; TR2
• Low collector capacitance
6, 3
collector
TR1; TR2
handbook, halfpage
6
5
DESCRIPTION
• Low VCEsat
• High current capabilities
• Improved thermal behaviour due to flat leads
• Reduced required PCB area
• Reduced pick and place costs.
4
6
5
4
APPLICATIONS
TR2
• Heavy duty battery powered equipment (automotive,
telecom and audio-video) such as motor and lamp
drivers
TR1
1
• VCEsat critical applications such as latest low supply
voltage IC applications
Top view
2
1
3
2
3
MAM456
• All battery driven equipment, to save battery power.
DESCRIPTION
Fig.1 Simplified outline (SOT666) and symbol.
NPN/PNP low VCEsat transistor pair in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PEMZ7
2001 Nov 07
MARKING CODE
Z7
2
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
PEMZ7
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
15
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1
A
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
V
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07
3
VALUE
UNIT
416
K/W
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
PEMZ7
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
−
VCB = 15 V; IE = 0
−
ICBO
collector-base cut-off current
VCB = 15 V; IE = 0; Tj = 150 °C
−
−
50
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 2 V; IC = 10 mA
200
−
−
VCEsat
collector-emitter saturation
voltage
IC = 200 mA; IB = 10 mA
−
−
220
mV
fT
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
250
420
−
MHz
100
280
−
MHz
TR1 (NPN)
−
4.4
6
pF
TR2 (PNP)
−
−
10
pF
TR1 (NPN)
TR2 (PNP)
Cc
collector capacitance
100
nA
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MHC014
600
MLD672
1200
handbook, halfpage
handbook, halfpage
hFE
(1)
(3)
(4)
IC
500
(2)
(1)
(mA)
(5)
800
400
(6)
(2)
(7)
300
(8)
200
400
(3)
(9)
100
(10)
0
10−1
1
10
102
0
103
2
0
4
6
IC (mA)
8
10
VCE (V)
TR1 (NPN); Tamb = 25 °C.
TR1 (NPN); VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2
DC current gain as a function of collector
current; typical values.
2001 Nov 07
(1) IB = 4.60 mA
(5) IB = 2.76 mA
(9) IB = 0.92 mA
(2) IB = 4.14 mA
(3) IB = 3.68 mA
(6) IB = 2.30 mA
(7) IB = 1.84 mA
(10) IB = 0.46 mA
(4) IB = 3.22 mA
(8) IB = 1.38 mA
Fig.3
4
Collector current as a function of
collector-emitter voltage; typical values.
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
MLD673
1200
VBE
PEMZ7
MHC017
1200
handbook, halfpage
handbook, halfpage
VBEsat
(mV)
(mV)
1000
1000
(1)
(1)
800
800
(2)
(2)
600
600
(3)
(3)
400
400
200
10−1
1
10
102
IC (mA)
200
10−1
103
1
10
103
IC (mA)
TR1 (NPN); VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
MHC018
103
handbook, halfpage
102
Base-emitter saturation voltage as a
function of collector current; typical values.
MHC019
600
handbook, halfpage
hFE
VCEsat
(mV)
500
102
(1)
400
300
(2)
(1)
10
200
(2)
(3)
(3)
100
1
10−1
1
10
102
0
−10−1
103
−1
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
−10
−102
−103
IC (mA)
DC current gain as a function of collector
current; typical values.
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
MLD650
−1200
PEMZ7
MLD667
−1200
VBE
handbook, halfpage
handbook, halfpage
(3)
(4)
IC
(mA)
(2)
(1)
(mV)
−1000
(5)
−800
(1)
(6)
−800
(7)
(2)
(8)
−600
−400
(9)
(3)
−400
(10)
0
−2
0
−4
−6
−8
TR2 (PNP); Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = 7.0 mA
IB = 6.3 mA
IB = 5.6 mA
IB = 4.9 mA
Fig.8
(5)
(6)
(7)
(8)
IB = 4.2 mA
IB = 3.5 mA
IB = 2.8 mA
IB = 2.1 mA
−200
−10−1
−10
VCE (V)
−10
−102
−103
IC (mA)
TR2 (PNP); VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(9) IB = 1.4 mA
(10) IB = 0.7 mA
Collector current as a function of
collector-emitter voltage; typical values.
Fig.9
MHC022
−1200
−1
Base-emitter voltage as a function of
collector current; typical values.
MHC023
−103
handbook, halfpage
handbook, halfpage
VBEsat
(mV)
VCEsat
(mV)
−1000
−102
(1)
−800
(1)
(2)
(3)
(2)
−600
−10
(3)
−400
−200
−10−1
−1
−10
−102
IC (mA)
−1
−10−1
−103
−1
−10
−102
−103
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
6
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
PEMZ7
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Nov 07
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
PEMZ7
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 07
8
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
NOTES
2001 Nov 07
9
PEMZ7
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
NOTES
2001 Nov 07
10
PEMZ7
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
NOTES
2001 Nov 07
11
PEMZ7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp12
Date of release: 2001
Nov 07
Document order number:
9397 750 09054