DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation PIN • Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 • Low collector capacitance 6, 3 collector TR1; TR2 handbook, halfpage 6 5 DESCRIPTION • Low VCEsat • High current capabilities • Improved thermal behaviour due to flat leads • Reduced required PCB area • Reduced pick and place costs. 4 6 5 4 APPLICATIONS TR2 • Heavy duty battery powered equipment (automotive, telecom and audio-video) such as motor and lamp drivers TR1 1 • VCEsat critical applications such as latest low supply voltage IC applications Top view 2 1 3 2 3 MAM456 • All battery driven equipment, to save battery power. DESCRIPTION Fig.1 Simplified outline (SOT666) and symbol. NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER PEMZ7 2001 Nov 07 MARKING CODE Z7 2 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 15 VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 V Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. 2001 Nov 07 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity − VCB = 15 V; IE = 0 − ICBO collector-base cut-off current VCB = 15 V; IE = 0; Tj = 150 °C − − 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA 200 − − VCEsat collector-emitter saturation voltage IC = 200 mA; IB = 10 mA − − 220 mV fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz 100 280 − MHz TR1 (NPN) − 4.4 6 pF TR2 (PNP) − − 10 pF TR1 (NPN) TR2 (PNP) Cc collector capacitance 100 nA VCB = 10 V; IE = Ie = 0; f = 1 MHz MHC014 600 MLD672 1200 handbook, halfpage handbook, halfpage hFE (1) (3) (4) IC 500 (2) (1) (mA) (5) 800 400 (6) (2) (7) 300 (8) 200 400 (3) (9) 100 (10) 0 10−1 1 10 102 0 103 2 0 4 6 IC (mA) 8 10 VCE (V) TR1 (NPN); Tamb = 25 °C. TR1 (NPN); VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.2 DC current gain as a function of collector current; typical values. 2001 Nov 07 (1) IB = 4.60 mA (5) IB = 2.76 mA (9) IB = 0.92 mA (2) IB = 4.14 mA (3) IB = 3.68 mA (6) IB = 2.30 mA (7) IB = 1.84 mA (10) IB = 0.46 mA (4) IB = 3.22 mA (8) IB = 1.38 mA Fig.3 4 Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification NPN/PNP general purpose transistors MLD673 1200 VBE PEMZ7 MHC017 1200 handbook, halfpage handbook, halfpage VBEsat (mV) (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 (3) (3) 400 400 200 10−1 1 10 102 IC (mA) 200 10−1 103 1 10 103 IC (mA) TR1 (NPN); VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Base-emitter voltage as a function of collector current; typical values. MHC018 103 handbook, halfpage 102 Base-emitter saturation voltage as a function of collector current; typical values. MHC019 600 handbook, halfpage hFE VCEsat (mV) 500 102 (1) 400 300 (2) (1) 10 200 (2) (3) (3) 100 1 10−1 1 10 102 0 −10−1 103 −1 IC (mA) TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 07 5 −10 −102 −103 IC (mA) DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN/PNP general purpose transistors MLD650 −1200 PEMZ7 MLD667 −1200 VBE handbook, halfpage handbook, halfpage (3) (4) IC (mA) (2) (1) (mV) −1000 (5) −800 (1) (6) −800 (7) (2) (8) −600 −400 (9) (3) −400 (10) 0 −2 0 −4 −6 −8 TR2 (PNP); Tamb = 25 °C. (1) (2) (3) (4) IB = 7.0 mA IB = 6.3 mA IB = 5.6 mA IB = 4.9 mA Fig.8 (5) (6) (7) (8) IB = 4.2 mA IB = 3.5 mA IB = 2.8 mA IB = 2.1 mA −200 −10−1 −10 VCE (V) −10 −102 −103 IC (mA) TR2 (PNP); VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (9) IB = 1.4 mA (10) IB = 0.7 mA Collector current as a function of collector-emitter voltage; typical values. Fig.9 MHC022 −1200 −1 Base-emitter voltage as a function of collector current; typical values. MHC023 −103 handbook, halfpage handbook, halfpage VBEsat (mV) VCEsat (mV) −1000 −102 (1) −800 (1) (2) (3) (2) −600 −10 (3) −400 −200 −10−1 −1 −10 −102 IC (mA) −1 −10−1 −103 −1 −10 −102 −103 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 07 6 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Nov 07 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 07 8 Philips Semiconductors Product specification NPN/PNP general purpose transistors NOTES 2001 Nov 07 9 PEMZ7 Philips Semiconductors Product specification NPN/PNP general purpose transistors NOTES 2001 Nov 07 10 PEMZ7 Philips Semiconductors Product specification NPN/PNP general purpose transistors NOTES 2001 Nov 07 11 PEMZ7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2001 Nov 07 Document order number: 9397 750 09054