DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 12 2002 Feb 04 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 PINNING FEATURES • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. handbook, halfpage 3 3 MARKING TYPE NUMBER 1 MARKING CODE(1) BC856 3D* BC856A 3A* BC856B 3B* BC857 3H* BC857A 3E* BC857B 3F* BC857C 3G* BC858B 3K* 2 1 Top view Fig.1 Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. 2002 Feb 04 2 2 MAM256 Simplified outline (SOT23) and symbol. Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC856 − −80 V BC857 − −50 V BC858 − −30 V BC856 − −65 V BC857 − −45 V BC858 − −30 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. 2002 Feb 04 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − −1 −15 nA − − −4 µA − − −100 nA BC856 125 − 475 BC857 125 − 800 BC856A; BC857A 125 − 250 BC856B; BC857B; BC858B 220 − 475 BC857C 420 − 800 VEB = −5 V; IC = 0 hFE DC current gain IC = −2 mA; VCE = −5 V VBE MAX. VCB = −30 V; IE = 0 emitter-base cut-off current VBEsat TYP. VCB = −30 V; IE = 0; Tj = 150 °C collector-base cut-off current IEBO VCEsat MIN. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA; − note 1 −250 −650 mV IC = −10 mA; IB = −0.5 mA − −700 − mV IC = −100 mA; IB = −5 mA; − note 1 −850 − mV IC = −2 mA; VCE = −5 V −600 −650 −750 mV IC = −10 mA; VCE = −5 V − − −820 mV Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 4.5 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 2 10 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 Feb 04 4 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 MGT711 500 MGT712 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 I C (mA) −10−1 BC857A; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGT713 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 −1 −10 −102 −103 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGT714 handbook, halfpage (1) (2) (3) −600 −102 −400 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 BC857A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 5 −10 −102 −103 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 MGT715 1000 MGT716 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 I C (mA) −10−1 BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. MGT717 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 −1 −10 −102 −103 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGT718 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 BC857B; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 6 −10 −102 −103 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 MGT719 1000 MGT720 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 0 −10−2 −200 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857C; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. MGT721 −104 handbook, halfpage VCEsat (mV) −1200 VBEsat (mV) −1000 −103 −800 MGT722 handbook, halfpage (1) (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 7 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2002 Feb 04 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 8 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Feb 04 9 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 NOTES 2002 Feb 04 10 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 NOTES 2002 Feb 04 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09167