BB439... Silicon Variable Capacitance Diode • For VHF tuned circuit applications • High figure of merit • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BB439 Type BB439 Package SOD323 Configuration single LS(nH) 1.8 Marking white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 28 Peak reverse voltage VRM 30 Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 Value Unit V ( R ≥ 5kΩ ) 1Pb-containing package may be available upon special request 1 2007-04-20 BB439... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 28 V - - 20 VR = 28 V, TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 43 - VR = 2 V, f = 1 MHz 31.5 34.5 37.5 VR = 3 V, f = 1 MHz 26.5 29 31.5 VR = 25 V, f = 1 MHz 4.3 5.1 6 CT2 /CT25 6 6.9 8 CT3 /CT25 5 5.8 6.5 ∆CT/CT - - 3 % rS - 0.35 0.5 Ω VR = 3 V, f = 50 MHz - 280 - VR = 25 V, f = 200 MHz - 600 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 3 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 3 V, VR = 25 V, f = 1 MHz Series resistance VR = 10 V, f = 100 MHz Figure of merit 1For Q details please refer to Application Note 047. 2 2007-04-20 BB439... Diode capacitance CT = ƒ (VR) Temperature coefficient of the diode f = 1MHz capacitance TCc = ƒ (VR) 60 10 -3 EHD07036 pF 50 1/°C 40 TCc CT BB 439 10 -4 30 20 10 0 10 -1 10 0 10 1 V VR 10 10 -5 0 10 2 10 1 V 10 2 VR 3 2007-04-20 Package SOD323 BB439... Package Outline 0.9 +0.2 -0.1 +0.2 1.25 -0.1 0 ±0.05 A 1.7 +0.2 -0.1 Cathode marking 0.45 ±0.15 2.5 ±0.2 2 1 0.3 +0.1 -0.05 +0.05 0.3 -0.2 0.15 +0.1 -0.06 0.25 M A 0.8 1.7 0.8 Foot Print 0.6 Marking Layout (Example) BAR63-03W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2 2.9 8 4 Cathode marking 0.65 1.35 4 1 2007-04-20 BB439... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 2007-04-20