Product Overview MBR140ESF: 40 V, 1.0 A Schottky Rectifier Low Leakage For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • • • • Guardring for Stress Protection Low Reverse Leakage 175C Operating Junction Temperature Epoxy Meets UL 94 V0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: (Human Body Model = 3B, Machine Model = M4) NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable Part Electrical Specifications Product Compliance Status MBR140ESFT1G AEC Qualified Configurat ion VRRM Min (V) VF Max (V) Active 40 Active IRM Max (µA) IO(rec) Max (A) IFSM Max (A) trr Max (ns) Cj Max (pF) Package Type 0.51 1 30 SOD123-2 40 0.51 1 30 SOD123-2 Active 40 0.51 1 30 SOD123-2 Active 40 0.51 1 30 SOD123-2 Pb-free Halide free MBR140ESFT3G AEC Qualified Pb-free Halide free NRVB140ESFT1G AEC Qualified PPAP Capable Pb-free Halide free NRVB140ESFT3G AEC Qualified PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016