Product Overview MBR2515L: 15 V, 25 A Schottky Rectifier For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, O-Ring diodes and polarity protection devices. Features • • • • Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70 C) Guardring for Stress Protection Highly Stable Oxide Passivated Junction (100 C Operating Junction Temperature) Epoxy Meets UL94, VO at 1/8" • • • • • • Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube Marking: B2515L For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) MBR2515LG Pb-free Active Single 15 0.45 15000 25 150 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type TO-220-2