Product Overview

Product Overview
MBR2515L: 15 V, 25 A Schottky Rectifier
For complete documentation, see the data sheet
Product Description
The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry
features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high
frequency switching power supplies, low voltage converters, O-Ring diodes and polarity protection devices.
Features
•
•
•
•
Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70 C)
Guardring for Stress Protection
Highly Stable Oxide Passivated Junction (100 C Operating Junction Temperature)
Epoxy Meets UL94, VO at 1/8"
•
•
•
•
•
•
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube
Marking: B2515L
For more features, see the data sheet
Part Electrical Specifications
Product
Compliance
Status
Configurat
ion
VRRM Min
(V)
VF Max
(V)
IRM Max
(µA)
IO(rec) Max
(A)
IFSM Max
(A)
MBR2515LG
Pb-free
Active
Single
15
0.45
15000
25
150
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
trr Max
(ns)
Cj Max
(pF)
Package
Type
TO-220-2