Product Overview MBR2535CTL: 35 V, 25 A Schottky Rectifier For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • • Very Low Forward Voltage (0.55 V Maximum @ 25 Amps) Matched Dual Die Construction (12.5 A per Leg or 25 A per Package) Guardring for Stress Protection Highly Stable Oxide Passivated Junction (125 C Operating Junction Temperature) Epoxy Meets UL94, VO at 1/8" • • • • • Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds Shipped 50 units per plastic tube For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) MBR2535CTLG Pb-free Active Common Cathode 35 0.47 5000 25 150 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type TO-220-3